SPD35N10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction: The SPD35N10 is an enhancement mode N-channel MOSFET that enables high power frequencies and high performances. The device uses N-channel MOSFET technology and is designed for industrial and consumer applications.

Application Field: This type of MOSFET is suitable for various applications, such as consumer and industrial applications. It is used in high-volume consumer and industrial applications, such as power switching, DC-DC conversion, AND gate ICs, igbt drivers, home and industrial automation, robotics and more. The device is also used in battery-powered and microprocessor-controlled systems.

Suitability: The SPD35N10 is suitable for high-side switches, low-side switches, OR gates, motion-sensing low-power circuits, solar power inverter circuits, and any other high-current applications which require fast switching.

Advantages: The SPD35N10 has a low gate-to-drain capacitance, which reduces the gate charge and energy loss. This device also has a low gate-to-source capacitance, which reduces noise and reduces the device\'s sensitivity to ringing or oscillations. This device also has a low input-gate-threshold voltage, which ensures a fast switching time and a wide dynamic range.

Working Principle: The SPD35N10 is an N-channel MOSFET which operates by allowing current to flow from the drain to the source whenever the gate voltage is greater than the threshold voltage. And this threshold voltage takes part in gate-source voltage, drain-source voltage and drain-gate voltage and other conditions. The internal gate controls the current flow, and is driven by the gate-source voltage (VGS).

When VGS is greater than the threshold voltage (VTH), the device turns on, and the current flows from the drain to the source. When VGS is less than the threshold voltage, the device is off, and no current flows through the device. The device also has a maximum allowed drain-source voltage (VDS) and maximum allowed drain current (ID).

The SPD35N10 also has an internal self-protection feature which limits the maximum drain current during the avalanche breakdown and the transient states. The avalanche breakdown protection helps protect the device from high voltage or current spikes. The device also has a temperature protection feature which limits the maximum drain current when the device is operating at elevated temperatures.

Conclusion: The SPD35N10 is a high-performance, high-power N-channel MOSFET. It is suitable for high-side switches, low-side switches, OR gates, motion-sensing low-power circuits, solar power inverter circuits, and any other high-current applications which require fast switching. This device has a low gate-to-drain capacitance, low gate-to-source capacitance, and low input-gate-threshold voltage, which ensures a fast switching time and a wide dynamic range. This device also has an internal self-protection feature and temperature protection feature which limits the maximum drain current.

The specific data is subject to PDF, and the above content is for reference