Allicdata Part #: | SPD30N03S2L10GBTMA1TR-ND |
Manufacturer Part#: |
SPD30N03S2L10GBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 30A TO252-3 |
More Detail: | N-Channel 30V 30A (Tc) 100W (Tc) Surface Mount PG-... |
DataSheet: | SPD30N03S2L10GBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 41.8nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD30N03S2L10GBTMA1 is a single N-channel E-MOSFET, abbreviated for Enhanced Metal Oxide Semiconductor Field Effect Transistor. It is specifically designed to switch negative voltages in a wide range of applications, from the highest level of digital audio amplifiers to the most demanding low-noise industrial power supplies. It operates using the highest levels of integration and features a low on-resistance and low CAP capacitance. It also features a low Total Gate charge to reduce switching losses.
The SPD30N03S2L10GBTMA1 has many advantages over other traditional transistors and FETs, such as its high input impedance and low output capacitance, which allow for higher noise immunity, higher current packages, and higher power dissipation. Furthermore, it is constructed using a very small silicon platform and advanced manufacturing technologies, allowing it to achieve high performance with low power consumption.
In terms of its application field, the SPD30N03S2L10GBTMA1 is commonly used in power and audio applications, including commun ication switches, switching regulators, converter circuits, power controllers and inverters, high-side switches, audio amplifiers and low-noise power controllers. Furthermore, it is particularly suitable for hostile environments, such as those present in an industrial setting, due to its ability to handle high voltages, high frequencies and high temperatures.
The SPD30N03S2L10GBTMA1 works by controlling a channel of electrons between a source and a drain, using a gate electrode to control the flow. As the gate voltage is increased, more current is allowed to flow from the source to the drain, allowing for a controlled voltage or current source. In this way, the SPD30N03S2L10GBTMA1 can be used to control various different types of circuits, such as those used to switch electrical circuits on and off, as well as those used to regulate current and voltage.
To summarise, the SPD30N03S2L10GBTMA1 is a single N-channel E-MOSFET specifically designed to switch negative voltages in a wide range of applications. It has many advantages over other traditional transistors and FETs and is commonly used in power and audio applications. It works by controlling a channel of electrons between a source and a drain, using a gate electrode to control the flow.
The specific data is subject to PDF, and the above content is for reference
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