Allicdata Part #: | SPU02N60C3BKMA1-ND |
Manufacturer Part#: |
SPU02N60C3BKMA1 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 1.8A IPAK |
More Detail: | N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-... |
DataSheet: | SPU02N60C3BKMA1 Datasheet/PDF |
Quantity: | 87 |
1 +: | $ 0.83790 |
10 +: | $ 0.74403 |
100 +: | $ 0.58823 |
500 +: | $ 0.45618 |
1000 +: | $ 0.36015 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The SPU02N60C3BKMA1 device is a single N-channel logic level field-effect transistor (FET). It is often used to dominate or amplify the signals in low-power or low-volt appliactions. It has low on-resistance, fast switching speed and good linear region. This application and working principles will explained here.
SPU02N60C3BKMA1 is a standard N-channel MOSFET, and it uses P-channel semiconductor material. The device consists of two semiconductor layers, an N-type and a P-type, that separated by an insulator. The conduction of the device is determine by the gate voltage. When a negative voltage is applied to the gate, it induce an N-type space-charge region that separates the two layers and eliminated the device, creating an open circuit.
The operating principle of the SPU02N60C3BKMA1 is similar to the normal N-channel MOSFET like the SPU02N60C3BKMA5. The gate voltage (Vgs) controls the openness or closeness of the device. The SPU02N60C3BKMA1 has a low gate threshold voltage and a low on-resistance when the gate voltage is below its threshold voltage, the device will be off. When the gate voltage exceeds the threshold voltage, the device will turn on.
The SPU02N60C3BKMA1 is ideal for low-power applications such as low-voltage portable devices. It has a small gate charge value and a fast switching speed. It is used for a variety of applications including amplifiers, switches and drivers. It can also be used for low-current amplifiers, low-frequency switches, small-signal switches, motor drivers and low-voltage switches.
The main advantage of the SPU02N60C3BKMA1 is its low on-resistance, which provide excellent linear region and speed. The linear region is a vital performance attribute when used in low power applications, because it allows the device to efficiently transfer energy from its source to its load. The SPU02N60C3BKMA1 has a fast switching speed, which improve its overall speed performance. The device is also an excellent choice for small-signal and low current applicatoins because of its low power consumption.
The SPU02N60C3BKMA1 is widely used in low-power or low-volt applications. Its excellent linear region and low on-resistance make it an ideal choice for low-voltage, low-power portable devices. The device has a fast switching speed and low gate charge value which improve its overall speed performance. The device is also a great choice for low-current amplifiers, motor drivers and low-voltage switches.
The specific data is subject to PDF, and the above content is for reference
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