SPU08P06P Allicdata Electronics
Allicdata Part #:

SPU08P06PIN-ND

Manufacturer Part#:

SPU08P06P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 60V 8.83A TO-251
More Detail: P-Channel 60V 8.83A (Ta) 42W (Tc) Through Hole PG-...
DataSheet: SPU08P06P datasheetSPU08P06P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: SIPMOS®
Packaging: Tube 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
FET Feature: --
Power Dissipation (Max): 42W (Tc)
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The SPU08P06P is a single field-effect transistor that is highly reliable and suitable for a variety of application fields. This device is known as a MOSFET, and it utilizes a semiconductor material with a different amount of electric charge compared to a standard transistor. It also uses a gate to control the flow of electrons. This results in a much better control over output voltage and current. With this device, it is less likely to cause instability, overheating, and other misfortunes.

In order to understand the working principle of the SPU08P06P, it is important to examine its gate, source, and drain. The gate is the input which is connected to the source voltage and is responsible for controlling the flow of electrons. The source and drain constitue the two leads of the MOSFET and the junction between these two leads is the substrate. The gate is made of an insulator, and when a positive gate voltage is applied, an electric field is created which reduces the current flow between the source and drain. This action is called the Gate Cutoff Effect.

The SPU08P06P can be used in a wide range of applications which require a high degree of control. It works especially well in designs which require the current or voltage to be switched on and off rapidly. Power supplies, motor controllers, audio amplifiers, and voltage regulators are just a few of the many applications where this transistor is ideal. In fact, it is a great choice for many projects that require high speed, low power, and flexibility in switching.

Furthermore, since the SPU08P06P offers excellent performance, it is being used in many other fields. Its low power operation is suitable for applications related to energy saving, such as LED lighting, battery management, and power management. Additionally, it is an excellent choice for applications related to digital signal processing, such as in audio, video, and data communication systems.

All in all, the SPU08P06P is an excellent choice for a wide range of application fields. Its working principle is simple and reliable, and it offers high levels of performance and flexibility. This transistor is a great choice for designers who require a high degree of control and power-saving designs.

The specific data is subject to PDF, and the above content is for reference

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