Allicdata Part #: | SPU07N60S5IN-ND |
Manufacturer Part#: |
SPU07N60S5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 7.3A TO-251 |
More Detail: | N-Channel 600V 7.3A (Tc) 83W (Tc) Through Hole PG-... |
DataSheet: | SPU07N60S5 Datasheet/PDF |
Quantity: | 1000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The SPU07N60S5 is a logic level power MOSFET, designed for high frequency switch mode power applications. It is an insulated-gate MOSFET provides very good input capacitance and gate charge characteristics, making it suitable for very low power applications.
The SPU07N60S5 is a n-channel enhancement-mode transistor featuring a very low input capacitance, high speed switching and low drain-source on-resistance. It has a very low gate threshold voltage which helps reduce conduction losses. This feature makes it an ideal choice for high efficiency and low EMI applications At the same time, it is also very resistant to gate dielectric damage.
The SPU07N60S5 features a very low input capacitance which allows for high frequency switching operation and makes it suitable for use in high-speed circuits. Its gate threshold voltage is also quite low, reducing conduction losses. The device is rated for a maximum drain-source voltage of 600V and a maximum current up to 5A.
The SPU07N60S5 is typically used in switched mode power supply applications. It can be used to efficiently switch between two load currents and also provide galvanic isolation in high-side switching applications. The device can be used in step-down and step-up DC-DC converters. It is also suitable for use in synchronous rectifier designs.
The working principle of the SPU07N60S5 is quite simple. When it is used as a switch, an input voltage is applied to the gate of the transistor and the current that flows between the source and drain is proportional to the voltage. This voltage will be amplified as it passes through the MOSFET, resulting in increased current and increased power. This, in turn, can be used to reduce the power consumption and increase the efficiency of the circuit. The most important component of the MOSFET is the gate, which helps determine the current capacity of the transistor.
In addition to its use in switched mode power supply applications, the SPU07N60S5 can also be used in power semiconductor applications such as rectifiers, inverters and motor driver circuits. It can also be used in high-speed switching applications such as switching regulators and RF power amplifiers. In applications where robustness and reliability are needed, such as high power motors and transformers, the SPU07N60S5 can be a good choice.
In summary, the SPU07N60S5 is an optimal choice for high frequency switch mode power supplies, power semiconductor applications, and high-speed switching applications. Its low gate-threshold voltage, low input capacitance, and high speed switching make it an ideal device for applications that require high efficiency and low EMI.
The specific data is subject to PDF, and the above content is for reference
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