Allicdata Part #: | SPU09P06PLIN-ND |
Manufacturer Part#: |
SPU09P06PL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 9.7A TO-251 |
More Detail: | P-Channel 60V 9.7A (Tc) 42W (Tc) Through Hole PG-T... |
DataSheet: | SPU09P06PL Datasheet/PDF |
Quantity: | 1000 |
Series: | SIPMOS® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The SPU09P06PL is a 600V single N-channel power MOSFET with advanced process technology and superior RDS(on) characteristics, making it an ideal choice for a wide variety of applications. This device is suitable for use in several applications ranging from consumer electronics and automotive to industrial and energy management. The SPU09P06PL features low ON-resistance, low gate charge and high current capability, making it suitable for use in a wide range of designs.
The SPU09P06PL is a simple 3-terminal MOSFET. It consists of a single N-channel MOSFET where the LOW side is connected to the source and the HIGH side is connected to the drain. When a voltage is applied to the gate, this voltage results in the generation of an electric field within the channel. This electric field forms an inversion layer at the interface between the semiconductor and the insulator, resulting in an increase in the current flow between the source and the drain. As such, the drain current is then controlled by the gate voltage level.
The SPU09P06PL has a higher switching speed than previously available MOSFETs and is typically used in applications with high current or power requirements. It also exhibits high dv/dt and di/dt in switching mode, making it suitable for use in high frequency switching and power conversion circuits. Additionally, it has a minimum average threshold drain-source on-resistance of 9 mΩ, making it suitable for a wide range of applications and reducing design time.
Due to its low RDS(ON), the SPU09P06PL can provide higher performance in several applications such as switching power supplies, DC-DC converters, battery management systems and high-frequency switching applications. It can also be used in automotive applications such as Automotive Electronic Control Unit, engine control, trailer braking, battery management and vehicle stability systems. Additionally, it is suitable for use in LED lighting and LED drivers, as well as motor drives and smart grid controllers.
The SPU09P06PL exhibits superior characteristics in comparison to conventional power MOSFETs. It has a higher current capability, faster switching, and lower gate and drain-source capacitances. These characteristics enable it to handle higher frequencies and improve switching efficiency, leading to reduced power consumption and improved performance. Additionally, the SPU09P06PL has a wide operating temperature range of -55 to 150 degrees Celsius, allowing it to be used in a variety of applications.
In conclusion, the SPU09P06PL is a high-performance single N-channel MOSFET that has a wide range of applications. It features high current capability, fast switching, and low ON-resistance, making it ideal for a variety of designs. The device is suitable for use in consumer electronics, automotive, industrial and energy management applications, and is also well-suited for LED lighting and LED drivers, motor drives, Automotive Electronic Control Unit, and smart grid controllers. The SPU09P06PL has superior characteristics compared to conventional power MOSFETs, and provides higher performance in switching power supplies, DC-DC converters and battery management systems.
The specific data is subject to PDF, and the above content is for reference
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