SS9018GBU Allicdata Electronics
Allicdata Part #:

SS9018GBU-ND

Manufacturer Part#:

SS9018GBU

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR RF NPN 30V 50MA TO-92
More Detail: RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Ho...
DataSheet: SS9018GBU datasheetSS9018GBU Datasheet/PDF
Quantity: 9726
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 9726Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The SS9018GBU is a bipolar Junction Transistor (BJT) RF semiconductor device. It is an NPN device, with an emitter, base and collector connection. The device is part of small signal transistor series designed specifically for high frequency applications such as radio frequency amplifiers. This particular device has a maximum operating frequency of 1.5GHz.

The SS9018GBU is commonly used for a variety of communications applications, especially those involving high frequency signals. These applications include high speed data transfer systems, CATV broadband amplifiers and satellite communications. The device can be used as a high frequency band-pass filter, an oscillator or amplifier, an impedance splitter and many other radio frequency applications.

The SS9018GBU is designed to have the highest possible frequency while minimizing power dissipation and minimizing inter-modulation distortion. In addition, the SS9018GBU has excellent thermal stability and is capable of broadband operation. The device also offers high gain, low noise, and high input and output impedance.

The SS9018GBU works by amplifying the radio wave signal through the base-emitter junction. The base of the transistor is used to apply a bias voltage to the emitter while the collector collects the amplified current. As the waveform of the signal enters the transistor, the base-emitter junction produces an amplified signal on the collector which is then fed to an output amplifier. The output amplifier is used to boost the signal to a higher level and then to feed it to other lower frequency devices.

The SS9018GBU is an efficient device and is one of the few transistors that offers very low parasitic capacitance and distortion. This device also has excellent thermal stability, due to its high voltage levels and low power dissipation. This makes the SS9018GBU ideal for applications where frequency sensitivity, stability and distortion control are key factors.

For best performance, the SS9018GBU should be properly mounted, cooled and supplied with good quality power. The SS9018GBU should be mounted on a heatsink to allow heat to be dissipated away from the device, as well as providing a physical means of securing the device. Proper cooling is important to ensure efficient operation of the device and to extend its life span. In addition, it is also important to ensure that a good quality power supply is used to supply the device, as this will ensure minimal voltage drop and maximum current output.

In conclusion, the SS9018GBU is a high frequency RF semiconductor device, designed for use in a variety of communications and data transfer applications. The device has excellent thermal stability and minimal distortion, allowing it to operate with high efficiency. Care must be taken when mounting and driving the device, in order to ensure optimal performance and long life.

The specific data is subject to PDF, and the above content is for reference

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