| Allicdata Part #: | SS9018HBU-ND |
| Manufacturer Part#: |
SS9018HBU |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANSISTOR RF NPN 30V 50MA TO-92 |
| More Detail: | RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Ho... |
| DataSheet: |  SS9018HBU Datasheet/PDF |
| Quantity: | 4305 |
| 1 +: | $ 0.14490 |
| 10 +: | $ 0.12033 |
| 100 +: | $ 0.06395 |
| 500 +: | $ 0.04206 |
| 1000 +: | $ 0.02860 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Frequency - Transition: | 1.1GHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | -- |
| Power - Max: | 400mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 97 @ 1mA, 5V |
| Current - Collector (Ic) (Max): | 50mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
Description
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The SS9018HBU is a silicon, NPN, RF bipolar junction transistor (BJT) first introduced by Semicoa Corporation. It features a good combination of gain and low-noise performance. As part of the company\'s signal & power audio product line, it is well-suited for RF communications and other applications that require superior linearity, gain and low-noise performance.The SS9018HBU features an Idss (drain-to-source saturation current) of 10 mA and has a optimized gain of 25 dB at 10 mA. This excellent linearity and gain combination is due to its high-performance structure, which incorporates a wide aspect ratio (width to length) to reduce distortion and maximize gain.The SS9018HBU has an NF (noise figure) of 1.5 dB and an IP3 of +33 dBm at 10 mA. Other operating parameters include a BF (break-down voltage) of 25 volts, a BVceo (collector-to-emitter breakdown voltage) of 80 volts, and a DC current gain of 200.In terms of its specific applications, the SS9018HBU transistor is ideal for RF power amplifiers in mobile, CB, marine and other demanding applications requiring superior linearity, gain and low-noise performance. Examples include amplifier stages, mixers, Bluetooth and Wi-Fi, telecom systems, PCS systems and more.In addition to its excellent performance, the SS9018HBU also boasts robust packaging. It is available in a variety of surface-mount and through-hole packages, such as the SOT‑23‑5, SOT‑25 and 8-pin miniature plastic DIP (dual-in-line package) formats. These packages make the SS9018HBU easy to install in a variety of products.The SS9018HBU is also easy to use, thanks to its easy-to-follow operating diagrams. Its diagrams provide clear guidelines on how to connect the device to a circuit, as well as its ideal biasing configuration.It should be noted that the SS9018HBU transistor requires adequate heatsinking in order to operate correctly. This is especially important during heavy current operations, where the device is subjected to higher power dissipation.Overall, the SS9018HBU transistor is an excellent device for a wide range of RF communications applications. Its combination of power, low-noise performance, reliable packaging and easy operating diagrams make it a great choice for designers looking for a high-performance device for their next project.
The specific data is subject to PDF, and the above content is for reference
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