Allicdata Part #: | SS9013GBU-ND |
Manufacturer Part#: |
SS9013GBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 625mW Thro... |
DataSheet: | SS9013GBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 112 @ 50mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | SS9013 |
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SS9013BU is a single-pole, double-throw (SPDT) NPN transistor available in a variety of small packages for use in a wide range of applications. This type of transistor is also known as an "enhancement mode" transistor. The transistor is designed to provide high-gain performance and low power consumption. It is ideal for use in miniature electronic circuits and low-power applications such as mobile phones, digital cameras, medical devices and so on.
The SS9013BU has a collector current rating of 100mA and a power dissipation at 25°C of 150mW. It has a collector-emitter voltage (VCE) rating of 30V, an emitter-base voltage (VBE) rating of 5V, and a collector-base voltage (VCB) rating of 30V. The transistor is also capable of switching currents up to 100mA. This makes it suitable for low-power applications such as current-driven amplifiers and digital switching circuits. The SS9013BU also offers excellent power dissipation performance at high temperature, providing excellent reliability and immediate availability.
The SS9013BU can be used in a variety of applications such as low-power amplifiers, logic-control circuits and switching circuits. It is also commonly used in power management applications such as over-voltage protection, energy-saving circuits, and DC/DC converter circuits. The SS9013BU is suitable for use in both analog and digital circuits for signal conditioning, signal amplification, signal switching, and logic control.
The SS9013BU operates on the principle of current gain. It is made up of a single P-type layer sandwiched between two N-type layers, forming an NPN transistor. The operation of an NPN transistor can be explained using the analogy of a water pump. In the analogy, a base voltage acts as a pump, delivering current from the emitter to the collector. The current gain of the SS9013BU is the ratio of the collector current to the base current. The higher the current gain, the more current will be delivered from the emitter to the collector. As such, a higher current gain also increases the voltage gain of the SS9013BU.
The SS9013BU is an excellent choice for low-power circuits and applications. It is capable of delivering high-gain performance, low power dissipation and excellent reliability even at high temperatures. With its high current gain and low power consumption, it is ideal for a wide variety of applications, ranging from amplifiers and switching circuits to device protection and energy-saving circuits.
The specific data is subject to PDF, and the above content is for reference
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