SS9015BBU Allicdata Electronics
Allicdata Part #:

SS9015BBU-ND

Manufacturer Part#:

SS9015BBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 190MHz 450m...
DataSheet: SS9015BBU datasheetSS9015BBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 450mW
Frequency - Transition: 190MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: SS9015
Description

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The SS9015BBU is a general-purpose high power transistor. It is typically used in power amplifier and switching applications. It is a single, general-purpose bipolar junction transistor (BJT) with a wide range of applications. The SS9015BBU has high breakdown voltage, high current gain, and high power rating, making it suitable for a variety of power amplifiers and switching designs.

The SS9015BBU is designed for operation in the common emitter configuration. It has an emitter-base junction rated at 5.6 volts, and a collector-base junction rated at up to 65 volts. The collector-emitter breakdown voltage is specified at up to 85 volts, with a minimum current gain of 40. The maximum DC collector current is 15 amperes, and the maximum collector power dissipation is 80 watts.

Understanding the basic working principle of the SS9015BBU is important when designing circuits that incorporate this device. The transistor works by controlling the amount of current that can flow from the collector to the emitter. The base-emitter junction is forward biased, so electrons can flow from the base to the emitter. At the same time, the collector-base junction is reverse biased, so holes can flow from the collector to the base. When a small current is applied to the base, the current gain of the transistor (called hFE) multiplies this current, thus allowing the much larger current to flow from the collector to the emitter.

The SS9015BBU, with its excellent characteristics and high power ratings, is a reliable and versatile device suitable for a wide range of applications. Its fast switching speed and high gain make it well suited for power amplifiers, power switching circuits, and other high-power circuit designs. Its relatively low cost, combined with its reliable performance, makes it an attractive choice for many applications.

The SS9015BBU is widely used in switching power supplies, motor drive circuits, and amplifier circuits. Its high current gain and high power dissipation make it an ideal choice for applications such as switching regulators, DC-DC converters, and AC-DC inverters. It is also widely used in amplifiers, audio amplifiers, and other high-power audio and video equipment.

The SS9015BBU is a reliable and versatile device that is suitable for a wide range of applications. Its high power rating and fast switching speed make it well suited for power amplifiers, power switching circuits, and other high-power designs. Its relatively low cost combined with its reliable performance makes it an attractive choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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