SS9012HBU

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	144 @ 50mA, 1V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	SS9012

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Introduction

The SS9012HBU is a single, common-emitter, NPN silicon transistor that has a wide range of applications, from low-power analog amplification to high-power switching operations. This versatile device is a popular choice for a variety of tasks, due to its low cost, high current capacity, and small package size.

Application Fields of SS9012HBU

The SS9012HBU is designed for a variety of linear and switching applications, including switching power supplies, audio amplifiers, video amplifiers, logic circuits, motor drivers, and h-bridge circuits. It can also be useful in RF amplification, DC-to-DC converters, and high-frequency oscillators. Additionally, due to the wide variety of possible uses, this transistor can be used in many different electronic system designs, from small-scale projects to large-scale commercial and industrial products.

SS9012HBU Working Principle

The SS9012HBU is an NPN silicon transistor, which means it utilizes the N-type semiconductor material and has both a source and drain terminal. The source is where the input signal is applied, while the drain is where the output signal is generated. Basically, when a voltage is applied to the SS9012HBU’s base terminal, the current flow between the collector and the emitter is modulated, resulting in an amplified signal at the collector. The SS9012HBU uses its base-emitter junction to create a voltage divider circuit, which affects the current flow between the collector and the emitter by varying the amount of current that is allowed to flow through the base terminal. This mechanism allows for precise control of the current flow, and thus the amplification of the signal at the collector.

Conclusion

The SS9012HBU is a versatile, single, common-emitter, NPN silicon transistor that is useful in a variety of applications, including linear and switching operations. Its low cost, high current capacity, and small package size make it a popular choice for electronics projects. Its working principle relies on the N-type semiconductor material, a voltage divider circuit, and an adjustable current flow through the base. This allows for controllable signal gain, which is useful in many electronic designs.

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