Allicdata Part #: | SS9012GBU-ND |
Manufacturer Part#: |
SS9012GBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 500mA 625mW Thro... |
DataSheet: | SS9012GBU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 112 @ 50mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | SS9012 |
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The SS9012GBU is a NPN silicon transistor that is capable of medium power amplification, switching for switching and high-speed applications. It can be found in various electronic devices and components. Understanding the application field and working principle of the SS9012GBU is beneficial for its proper application.
Application Field of SS9012GBU
The SS9012GBU can be used in many different applications, such as signal amplification, switch driving, load driving, logic level signal amplification, and high-speed switching. It is especially used in switching applications, such as relay switches and to create high-speed switching signals.
The SS9012GBU is also used in high current application fields. It has the capacity of medium power amplification, which makes it suitable for applications where large amounts of electrical power are needed. Other application fields include audio signal amplifications, frequency circuitry, circuit protection and RF receivers.
Working Principle of SS9012GBU
The SS9012GBU is a NPN silicon transistor that Amplifies current. It is composed of three layers: the base, the collector and the emitter. Base is the layer that allows electrons to flow from the collector to the emitter. This flow of electrons is called current and it moves in response to voltage as explained by Ohm’s law.
When a positive current is applied to the base, it allows electrons to flow to the emitter, which increases the emitter current. This creates a voltage difference between the emitter and collector, which creates a gain. The process is called current amplification and is the main function of the SS9012GBU.
The SS9012GBU can also be used as a switch, allowing current flow between the collector and emitter when the base is saturated. This can be used in circuits to switch between different states. The SS9012GBU can handle a maximum current of 800mA.
Conclusion
The SS9012GBU is a popular NPN silicon transistor used for many applications. It is capable of medium power amplifications, switching and high speed operation. The application fields of SS9012GBU include signal amplification, switching and load driving. The working principle of the device is based on current amplification between the collector and the emitter. Understanding the SS9012GBU’s application field and working principle can help you make the most of the device’s capabilities.
The specific data is subject to PDF, and the above content is for reference
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