Allicdata Part #: | SS9013GTA-ND |
Manufacturer Part#: |
SS9013GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 625mW Thro... |
DataSheet: | SS9013GTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 112 @ 50mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | SS9013 |
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The SS9013GTA Bipolar Junction Transistor (BJT) is a single transistor that is commonly used in a wide range of applications. It is usually used as an input or output stage amplifier, in special applications such as battery operated circuits, and in complex high frequency power amplifiers used in motor control circuits.
Features
The SS9013GTA is a single transistor that employs medium power technology, providing good performance and small package size. The device has high breakdown voltage and high current gain, making it suitable for use in high current applications. It also has good thermal stability and is resistant to thermal runaway. It is capable of providing a high output current of 5A in power circuits.
Operation
The SS9013GTA is a NPN-type bipolar junction transistor (BJT). It employs a base-emitter junction and a collector-emitter junction. The emitter is connected to the collector, and the base is used as control point of the transistor. The base-collector current flows when the base-emitter junction is forward-biased. This forward bias causes a large number of electrons to be released from the emitter and from the collector, thereby causing the current flow from the collector to the emitter. The resulting current flow is determined by the amount of current that flows through the base.
Applications
The SS9013GTA is a high-performance, low-cost transistor that is suitable for a variety of applications, such as battery operated circuits, input and output stages in amplifiers, and complex high frequency power amplifiers used in motor control circuits. It can also be used in high current circuits, such as DC-DC converters, low-noise preamplifiers, and power supplies. The device has a wide range of applications in power switching and control, thanks to its high current gain, high breakdown voltage, and low on-resistance.
Working Principle
The SS9013GTA is a NPN-type bipolar junction transistor (BJT). Its operation is based on the principle that when a voltage is applied between the base and the emitter, it causes electrons to be released from the emitter and collected by the collector. The amount of current that flows through the base-collector junction is determined by the amount of current that flows through the base. The collector-emitter current is said to be produced due to the flow of minority carriers, which are electrons or holes that are made available from the base-emitter junction.
The SS9013GTA is capable of providing a high output current of 5A in power circuits. The device is suitable for a variety of applications, especially those that require a high current gain, a high breakdown voltage, and a low on-resistance. This makes it a preferred device for high current applications, such as DC-DC converters, low-noise preamplifiers, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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