Allicdata Part #: | SS9013FTF-ND |
Manufacturer Part#: |
SS9013FTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 625mW Thro... |
DataSheet: | SS9013FTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 78 @ 50mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | SS9013 |
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Transistors -- Bipolar (BJT) -- Single.
The SS9013FTF is a PNP silicon planar epitaxial transistor with a high DC current gain of 800 to 900 at its collector current of 10 mA. It has a relatively high beta and is used mainly in the linear amplification of low-frequency signals. This device is extremely popular in audio applications such as amplifiers, pre-amplifiers, filters, and similar types of audio systems.
The device is an ideal choice for applications like amplifying small input signals at audio frequencies where dynamic range, high fidelity and minimum distortion are important requirements. It has a low noise figure of 1.2 dB and it also carries a high power dissipation rating of 900mW.
The SS9013FTF is constructed with an N-type well layer, where the N-type well layer is supported by an individual P-type substrate to provide necessary insulation. The transistor has three pins, source, gate and drain. The source pin is connected to the N-type well layer and the gate and drain pins are connected to the P-type substrate.
The SS9013FTF transistor works on the principle of bipolar junction transistor (BJT). A BJT is a three-terminal device that consists of two p-n junctions which are separated by a thin base region. The transistor has a base, collector and emitter. When a voltage is applied to the base, some electrons are drawn from the emitter’s p-type material into the base, which causes a depletion of current flowing through the base-emitter junction. This effect is known as the input junction of the device. As the voltage increases, current increases in the base and flows from collector to the emitter. This current is then amplified by the transistor.
The SS9013FTF has a very wide range of applications. It is mainly used as an input and driver stage in various audio amplifier designs because of its high DC current gain and low noise figure. It can also be used as an oscillator in the filter networks due to its narrow bandwidth. Moreover, it can also be used in switching circuits because of its fast turn-on and turn-off times.
The SS9013FTF is a robust and reliable device that is suitable for use in a wide range of applications. Its long-term operation at high temperatures makes it highly suitable for use in audio applications where heat dissipation is a critical issue. It has also proven its mettle in automotive and other high-end industrial applications due to its exceptional performance. In conclusion, the device has established itself as one of the most reliable and robust transistors available in the market.