SS9011GBU Allicdata Electronics
Allicdata Part #:

SS9011GBU-ND

Manufacturer Part#:

SS9011GBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.03A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 30mA 2MHz 400mW T...
DataSheet: SS9011GBU datasheetSS9011GBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
Power - Max: 400mW
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The SS9011GBU is a type of bipolar transistor, specifically known as a single bipolar transistor. It is manufactured by Samsung Electronics, and is an NPN transistor with a maximum collector current of 500 mA and a maximum emitter current of 100 mA. It has a maximum collector-emitter voltage of 40 V and is capable of switching at frequencies of up to 12 MHz.This type of transistor is used in a variety of applications such as amplifying and switching circuits, as well as devices operating at high frequencies.

The basic principle of operation of a single bipolar transistor is that when a voltage is applied between the base and emitter electrodes, a current will flow between the collector and emitter electrodes. This current is controlled by the voltage applied to the base-emitter junction and can be increased or decreased as necessary. When the base-emitter junction is forward biased, current can flow from the collector to the emitter, resulting in amplification of the input signal.

In addition to amplifying and switching circuits, the SS9011GBU can also be used in a variety of other applications. These include signal generators, power amplifiers, LED drivers, and even as a switching regulator. It is well-suited for applications that require high speed and reliability, such as telecommunications systems and medical imaging devices.

Numerous other transistors are available on the market, each of which is suitable for a specific application. In general, the SS9011GBU is an excellent choice for applications where high speed and reliability are essential. It is capable of operating at frequencies up to 12 MHz, and can provide excellent performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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