SS9013HTA Allicdata Electronics
Allicdata Part #:

SS9013HTA-ND

Manufacturer Part#:

SS9013HTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 20V 500mA 625mW Thro...
DataSheet: SS9013HTA datasheetSS9013HTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: SS9013
Description

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The SS9013HTA is a NPN bipolar junction transistor (BJT) designed for use in audio and general-purpose amplification applications. It is manufactured to provide reliable performance and low distortion over a wide range of current and voltage gain, making it suitable for a variety of analog circuits. The SS9013HTA has an extremely wide range of operating conditions, allowing it to be used in high-frequency, low-power, and high-power amplifiers.

The SS9013HTA is an NPN single transistor with two terminals, the collector and the emitter. The emitter is the negative terminal, while the collector is the positive terminal. A base lead connects the emitter and collector and allows for current control.

The SS9013HTA is constructed using an alloy substrate which is small in size and resistant to thermal shock, mechanical stresses, and reproducibility. This small size and high stability allow for precise signal, amplitude, and power control. The high voltage gain of the SS9013HTA also makes it suitable for audio and high-power amplifier applications.

The SS9013HTA\'s collector current rating is 60 mA, with a maximum collector-emitter saturation voltage of 0.4 V. It also features an on-resistance of 25 Ω and a maximum collector cutoff current of 5 mA. The SS9013HTA is protected from reverse-biasing, as it features an internal breakdown voltage of 40 V. Its high common-mode rejection ratio of 60 dB makes it suitable for high-frequency applications where high-frequency noise is to be minimized.

The SS9013HTA works on the principle of current control. Current flows through the emitter, across the collector, and back to the base. When the base voltage is increased, the collector current increases- this is known as the common-emitter configuration. The collector-emitter current is the difference between the collector current and the base current, and is referred to as the base current gain. Increasing the amount of base current gain increases the total amount of current flowing through the transistor.

In summary, the SS9013HTA is an NPN single bipolar junction transistor suitable for a variety of audio and general-purpose amplification applications. Its small size and excellent stability make it useful for precise signal and power control, and its high voltage gain makes it ideal for high-power applications. It is protected from reverse-biasing and has a high common-mode rejection ratio, making it suitable for high-frequency applications. The SS9013HTA works on the principle of current control, wherein increasing the amount of base current gain increases the total amount of current flowing through the transistor.

The specific data is subject to PDF, and the above content is for reference

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