SST39LF040-55-4I-WHE Allicdata Electronics
Allicdata Part #:

SST39LF040-55-4I-WHE-ND

Manufacturer Part#:

SST39LF040-55-4I-WHE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 32TSOP
More Detail: FLASH Memory IC 4Mb (512K x 8) Parallel 55ns 32-T...
DataSheet: SST39LF040-55-4I-WHE datasheetSST39LF040-55-4I-WHE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: SST39LF040
Description

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SST39LF040-55-4I-WHE Memory Application Field and Working Principle

Memory can be divided into several types, such as DRAM, SRAM, and non-volatile memory. Among them, the SST39LF040-55-4I-WHE belongs to the Flash Memory category. This type of memory is commonly used in portable devices, desktop computers, industrial controllers, and embedded systems.Flash memory, or non-volatile storage, has the ability to store data without power. This makes it ideal for use in portable devices, such as digital cameras and mobile phones. Flash memory is used in various applications, including storing program instructions, applications, operating systems, and user data.The SST39LF04-55-4I-WHE is a standard 4 Megabit (Mb) Serial Flash device, which can store up to 32768 bytes of data. It is manufactured using standard 0.33 micron CMOS technology, offering good performance and reliability.The working principle of SST39LF04-55-4I-WHE is based on the concept of Cell Programming. This cell programming technique allows the Flash device to store data in a non-volatile manner, enabling it to retain data even when power is removed. The memory cell is composed of NAND Flash cell array and a controller, which is responsible for erasing, writing, and reading the data stored in the memory cells.When data needs to be written or stored in the SST39LF04-55-4I-WHE, the controller uses a series of voltage pulses to open and close the memory cell, thus allowing data to be programmed into it. Similarly, when data needs to be written or stored in the SST39LF04-55-4I-WHE, the controller sends a signal to the cell to initiate an erase operation. The Flash memory device is also capable of an automatic process known as Refresh Cycle. This process refreshes the memory cells regularly and ensures that the data stored in the device is always current.The SST39LF04-55-4I-WHE also offers advanced features such as Error detection and correction (ECC), Read Mode Protection (RMPS), Erase Suspension (ESU), Write Protect (WP), Security Register (SR), and Endurance (ED). These features help protect the integrity of the data stored in the memory device by providing higher data integrity levels.In conclusion, the SST39LF04-55-4I-WHE is a robust and reliable non-volatile storage device. It can store data even when power is removed, and has built-in features which offer improved data security and integrity. This device is suitable for a variety of applications, including portable devices, desktop computers, and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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