SST39VF6401B-70-4I-B1KE-T Allicdata Electronics
Allicdata Part #:

SST39VF6401B-70-4I-B1KE-T-ND

Manufacturer Part#:

SST39VF6401B-70-4I-B1KE-T

Price: $ 4.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 64M PARALLEL 48TFBGA
More Detail: FLASH Memory IC 64Mb (4M x 16) Parallel 70ns 48-T...
DataSheet: SST39VF6401B-70-4I-B1KE-T datasheetSST39VF6401B-70-4I-B1KE-T Datasheet/PDF
Quantity: 1000
2000 +: $ 3.67278
Stock 1000Can Ship Immediately
$ 4.04
Specifications
Series: SST39 MPF™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA
Base Part Number: SST39VF6401B
Description

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The SST39VF6401B-70-4I-B1KE-T is a type of static random-access memory (SRAM) used in many embedded digital systems. The memory is small and low-power, making it a great choice for many applications where space and power are important considerations. It is used in a variety of embedded electronics, including industrial automation and control systems, automotive infotainment systems, healthcare devices, and consumer electronics.

The SRAM used in the SST39VF6401B-70-4I-B1KE-T is a type of volatile memory, meaning it will lose its stored data when power is removed from the system. However, due to its relatively low power consumption, it is well-suited for many applications where energy savings is important. It can also be used in battery-backed systems, since it requires little energy to retain its stored data.

The SST39VF6401B-70-4I-B1KE-T is a 256-Kbyte asynchronous SRAM that can function at multiple operating voltages, ranging from 2.7V to 3.6V. This makes it suitable for a wide range of devices and applications, as it can be used in both low-voltage and higher-voltage systems. It is capable of interfacing with a variety of memory-related devices, including microcontrollers and other memory types. The memory also boasts high performance, with a typical access time of 50ns and a data retention time of 20 years.

The SST39VF6401B-70-4I-B1KE-T operates on a simple working principle. The memory is divided into 8-bit cells, and each cell stores a single bit of data. A port provides an interface for the memory, and is used to read the data from and write the data to the memory cells. Read and write operations are controlled by logic signals, which are used to address the specific memory cell, and allow data to be transferred. Data can be written to and read from the memory asynchronously, meaning that a processor core is not necessarily required.

In conclusion, the SST39VF6401B-70-4I-B1KE-T is a type of static random-access memory (SRAM) commonly used in embedded systems. It is a low-power, high-performance memory type that is suitable for numerous applications. Its simple working principle allows data to be read from and written to the memory asynchronously, making it a great choice for many types of systems.

The specific data is subject to PDF, and the above content is for reference

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