Allicdata Part #: | SST39VF040-70-4I-NHE-TTR-ND |
Manufacturer Part#: |
SST39VF040-70-4I-NHE-T |
Price: | $ 1.11 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 4M PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 4Mb (512K x 8) Parallel 70ns 32-P... |
DataSheet: | SST39VF040-70-4I-NHE-T Datasheet/PDF |
Quantity: | 1000 |
750 +: | $ 0.99931 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39VF040 |
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SST39VF040-70-4I-NHE-T is a 128M (4M × 32) Flash memory device that totally contains 32M words. It is a kind of memory device, which is capable of executing certain tasks within a certain span of time so that it can provide data or execute operations using different components. By using an advanced 4-bits, 2-level NAND array, the SST39VF040-70-4I-NHE-T memory device is capable of high speed erase, program and random read.
The SST39VF040-70-4I-NHE-T consists of four 32M words blocks with uniform sector architecture. Each block contains four 16K “super sectors” and there are eight 8K “segments” in each super sector. The block is further divided into two sectors which are 16K words in size with uniform sector architecture. Both 8K and 4K words are used in the super sector and the segment which can be programmed and erased separately.
The core of SST39VF040-70-4I-NHE-T is built around a 4-bit, 2-level NAND cell array. The memory device operates at an optimal speed of 55ns/word with full read-write functions. The device is protected by two software functions, a block lock and a write protect. The block lock ensures security by preventing a single block from being accidentally erased or programmed. The write protect disable command prevents write operations from taking place until the write protect feature is enabled.
The SST39VF040-70-4I-NHE-T is suitable for applications such as embedded systems, microcontrollers, personal computers, data communication systems, industrial control, consumer electronics and automotive industries. The device has a wide range of operating voltages, read/write speeds and aligned interface options, making it an ideal solution for traditional and emerging applications.
The working principle of the SST39VF040-70-4I-NHE-T is based on the interaction between the external signals and the control circuit. The flash voltage is set according to the internal reference voltages. The control allows data to be read from the memory or written to it. The device is synchronized to the external clock, allowing data to be transferred under the strict timing constraints. When the chip select (CS) is active, the data inputs are used for writing. When the write/read (WR) is active, data from the selected address will be transferred from the device to the output pins.
The SST39VF040-70-4I-NHE-T memory device offers high capacity, speeds and reliability at a cost-effective price. The device\'s wide range of characteristics make it suitable for a variety of application scenarios. Consumers benefit from the improved performance, increased reliability, and cost-efficiency provided by the device.
The specific data is subject to PDF, and the above content is for reference
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