SST39WF800B-70-4C-B3KE

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The SST39WF800B-70-4C-B3KE belongs to the flash memory family. Flash memory is a type of non-volatile storage device. It is essentially a special type of electronically erasable programmable ROM (EEPROM) that can be erased and reprogrammed frequently with the application of higher than normal electrical voltage. Thus, unlike a ROM, which is difficult to modify, it can be rewritten a large number of times. Flash memory offers fast access times, high-density storage, low power consumption and rugged operation.
The SST39WF800B-70-4C-B3KE is a single-die, x8/x16 asynchronous flash memory device. The device utilizes a 4-Kword uniform sector organization whose erase unit is a 4-Kword sector. The SST39WF800B-70-4C-B3KE only requires a single 3.3V power supply. The device is designed with a gold-plated lead frame and advanced CMOS design rules for increased reliability. The device has an asynchronous interface and supports both x8 and x16 data transfers. It is composed of 16,384 words by 8 (128K) or 8192 words by 16 bits (128K).

The SST39WF800B-70-4C-B3KE is a cost-effective memory solution for large-capacity applications such as storage cards, gaming systems, digital video players and camcorders. The device is suitable for applications where a large number of program/erase cycles are needed or where read/write speeds are important. It can also be used in any application where fast access times, low power consumption, and ruggedness are critical characteristics.

When it comes to the device\'s working principle, the SST39WF800B-70-4C-B3KE incorporates both direct write and page read/write data transfer modes. Direct write allows single byte or word random write programming of the array, while page read/write data transfer mode is designed for sequences of bytes or words to be written to the array. The device does not contain a programmable protection array. Data on the device is programmed by writing to memory locations with a high voltage along with pulses written to the Flash control signals.

The device also features an endurance cycle specification of 10,000 cycles with a write/erase time of 10 microseconds. It has advanced read/write timings that are suitable for a range of operating frequencies. In addition, the device has a power-down feature that reduces power consumption during system idle times.

Overall, the SST39WF800B-70-4C-B3KE provides an affordable memory solution for high-capacity mobile applications. It features fast access times, low power consumption, and advanced CMOS design rules that provide high reliability. With its direct write and page read/write data transfer modes, the device is suitable for both random and sequential writing of data. The device\'s endurance cycle specification of 10,000 cycles and write/erase time of 10 microseconds further adds to its suitability for many different applications.

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