SST39LF801C-55-4C-EKE-T Allicdata Electronics
Allicdata Part #:

SST39LF801C-55-4C-EKE-T-ND

Manufacturer Part#:

SST39LF801C-55-4C-EKE-T

Price: $ 0.72
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 8M PARALLEL 48TSOP
More Detail: FLASH Memory IC 8Mb (512K x 16) Parallel 55ns 48-...
DataSheet: SST39LF801C-55-4C-EKE-T datasheetSST39LF801C-55-4C-EKE-T Datasheet/PDF
Quantity: 1000
1000 +: $ 0.65539
Stock 1000Can Ship Immediately
$ 0.72
Specifications
Series: SST39 MPF™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 10µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: SST39LF801
Description

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SST39LF801C-55-4C-EKE-T is a 8 megabit (1 M x 8-bit/512 K x 16-bit) CMOS Flash memory device, organized as one million bytes (1 MB) for 8-bit mode and half million words (512 KW) for 16-bit mode. It is ideal for a wide range of applications such as non-volatile storage, system code storage, self-programmable data logging, processor code storag, boot codes, and data retention. With its wide range of features, SST39LF801C-55-4C-EKE-T is a highly reliable and cost effective solution for your non-volatile storage requirements.

SST39LF801C-55-4C-EKE-T belongs to the category of memory products, with a range of applications and a variety of characteristics that allow it to be used for both high performance and cost-effectiveness. Its voltage range of 2.7-3.6V and read current of 20mA make it suitable for a range of devices. It is offered in a small 8-lead TSOP-II package that is optimized for board space and power efficiency. It provides high-speed transfers at up to 55MHz, allowing for a high degree of flexibility in system designs.

The working principle of SST39LF801C-55-4C-EKE-T is based on Floating Gate technology. The core element of the floating gate memory is a cell consisting of two transistors, a control gate and a floating gate. When the control gate is biased, electrons tunnel from the substrate, through an oxide layer, onto the floating gate. Once the electrons are on the floating gate, the cell is turned on, and the state of the cell is read by sensing the amount of current flowing through it. To write to the memory cell, a voltage is applied to the control gate and electrons are injected from the substrate, through the oxide layer and onto the floating gate, thus changing the state of the cell.

SST39LF801C-55-4C-EKE-T is suitable for a range of applications in consumer electronic products, such as Set Top Boxes, DVD players and digital media devices, as well as a range of industrial applications such as barcode scanners and machine controllers. It is a reliable and cost-effective solution for medium-density data storage, providing a wide range of features and applications that make it ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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