SST3906T116 Allicdata Electronics
Allicdata Part #:

SST3906T116TR-ND

Manufacturer Part#:

SST3906T116

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 40V 0.2A SST3
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 350m...
DataSheet: SST3906T116 datasheetSST3906T116 Datasheet/PDF
Quantity: 6000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 6000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Base Part Number: T3906
Description

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The SST3906T116 is a single used transistor in the field of electronics engineering. It is specifically classified as a bipolar junction transistor (BJT). This type of transistor is a current-controlled device consisting of three p-n junctions that form a three-layer semiconductor structure. The three layers consists of a base layer, an emitter layer and a collector layer. The current flow within a BJT is bi-directional, which allows power control and is capable of amplification, due to its ability to pass electric current through it. Specifically, this transistor is used as an integrated and modularized power amplifier module in audio equipment, light displays and other industrial automation fields.

The SST3906T116 features an amplifier gain of 130 and a maximum collector current of 10A. It also has a maximum collector to emitter voltage of 50V, giving it a high power output and reliable power control. In addition, the high switching speeds of the SST3906T116 allows for rapid on and off switching, ideal for applications where a fast response time is required. The SST3906T116’s transistor also has a low collector to emitter saturation voltage of 1.27V, resulting in minimal power losses and maximum efficiency.

The working principle of a bipolar junction transistor (BJT) is based on the principle of current control. The base current of a BJT is divided into two portions, one passing through the depletion region and the other through the transistor’s collector. The current passing through the collector controls the current flow between the emitter and collector, which is referred to as the "forward bias" current. Inversely, the current passing through the emitter indirectly attracts charge carriers and hampers the flow of current, resulting in the "reverse bias" current. The magnitude of the current passing through the collector determines the bipolar nature of the transistor, allowing it to be used as an amplifier.

The SST3906T116 is primarily used in audio applications such as amplifying and tuning audio signals, but can also be used in medical equipment, electrical appliances, robots and automotive components. Its high switching speeds and low saturation voltage make it an ideal choice for applications where fast response time and power efficiency are important. Furthermore, due to its low noise level and superior temperature stability, the SST3906T116 is highly reliable and accurate in industrial automation, making it a versatile and reliable component in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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