SST39VF6401B-70-4I-B1KE-T-MCH Allicdata Electronics
Allicdata Part #:

SST39VF6401B-70-4I-B1KE-T-MCH-ND

Manufacturer Part#:

SST39VF6401B-70-4I-B1KE-T-MCH

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 64M PARALLEL 48TFBGA
More Detail: FLASH Memory IC 64Mb (4M x 16) Parallel 70ns 48-T...
DataSheet: SST39VF6401B-70-4I-B1KE-T-MCH datasheetSST39VF6401B-70-4I-B1KE-T-MCH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (8x10)
Description

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The SST39VF6401B-70-4I-B1KE-T-MCH is a kind of memory, and it is an 8Mbit Flash memory device. This device has a 4 mega-bit (512K x 8 bit) organization in 8-pin packages, giving a very wide range of applications. This device is also known as a EEPROM (Electrically Erasable Programmable Read-Only Memory).

The SST39VF6401B-70-4I-B1KE-T-MCH memory provides a non-volatile, gas-storing memory cell that stores 8bit of data. It is extremely reliable with a very low error rate and is manufactured using a static-CMOS (Complementary Metal Oxide Semiconductor) process. It has a cycle time of 70ns and a medium access time of 55ns.

The SST39VF6401B-70-4I-B1KE-T-MCH also features two independent chip select (CS) pins for flexibility in multi-chip configurations. Furthermore, this device is well suited for use in environments where speed and data integrity must be maintained without compromising security of the data. This is a big advantage over other types of storage, as it prevents data corruption and accidental overwriting of data.

The working principle of the SST39VF6401B-70-4I-B1KE-T-MCH is quite simple. The write operation occurs by inserting a high voltage pulse into the cell. This results in the electron-hole pair becoming charged due to application of insulation barrier. The charge stays in the cell until it is discharged by applying a negative voltage pulse.

The SST39VF6401B-70-4I-B1KE-T-MCH is mainly used in automotive and automotive safety applications. Its low error rate, high speed, and data integrity make it an ideal choice for a wide range of automotive applications, including FAT (file allocation table) management, programming flash systems, automotive ignition systems, and security systems. It is also used in consumer electronics such as cameras, digital watches, GSM communication devices, and other similar products.

In addition to automotive applications, the SST39VF6401B-70-4I-B1KE-T-MCH can also be used in industrial applications. It is used in medical devices, industrial control systems, intelligent process control, factory automation, and other such applications, where taking satisfactory data integrity, reducing downtime, and improving accuracy are very important. Additionally, its 8Mbit capacity allows for massive data storage and faster throughput when compared with other memory types.

In conclusion, the SST39VF6401B-70-4I-B1KE-T-MCH is a powerful memory device that provides excellent data integrity and fast speeds. It is an ideal choice for automotive, industrial, and consumer electronics applications, where data integrity and speed are of utmost importance.

The specific data is subject to PDF, and the above content is for reference

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