SST39LF402C-55-4C-EKE-T

Series:	SST39 MPF™
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	10µs
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	SST39LF402C

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Introduction to SST39LF402C-55-4C-EKE-T

The SST39LF402C-55-4C-EKE-T is a 512 Kbit CMOS Flash Memory that is organized as 64 K x 8. It is a low-power, high-density memory that is typically used for non-volatile storage applications such as computer BIOS, system memory, and programmable logic devices.

Application Field of SST39LF402C-55-4C-EKE-T

The SST39LF402C-55-4C-EKE-T is suitable for use in a range of applications including DSPs, embedded systems, automotive/industrial control and medical instrumentation. It is well suited for storing programs, algorithms or data in non-volatile memory applications. This type of memory is well suited for applications requiring frequent before and after reprogramming.The SST39LF402C-55-4C-EKE-T can handle memory sizes ranging from 128MB to 2GB, and its fast programming speed makes it ideal for applications requiring frequent reprogramming. This type of memory is also ideal for raising system performance by shorter access times, faster throughput and better memory retention characteristics. One particular advantage of using this type of memory is that it is capable of supporting both 5V and 3V operation, eliminating the need for an external logic device to generate an upper voltage level and a lower voltage level in order to store data.

Working Principle of SST39LF402C-55-4C-EKE-T

The SST39LF402C-55-4C-EKE-T utilizes a unique one-transistor, two-bit cell design that enables fast and high-reliability embossed chip organization (ECO). This type of memory is capable of implementing various data access control functions that are commonly used in low-power memory systems. To achieve fast programming, the cells are Sined, the programming is carried out within the time taken to store a byte of data. This type of program-verify cycle takes less than 10ms, reducing validation time and increasing data security. The SST39LF402C-55-4C-EKE-T implements an on-chip control logic that enables the chip to be wired according to the bit signal protocol used in the target system. This type of control logic integrates signal decoding and generates program and read commands, making the access time to data very short.The SST39LF402C-55-4C-EKE-T also utilizes an erase verify technique that operates much faster than the traditional erase cycle. This erase technique is based on a random address read operation. The device calculates the expected address like a read operation, the data are checked for logical 0’s, and the address is reread with a programmed bit-list at the end of the cycle. Feature Summary

• organized as 64K x 8
• high-density Flash Memory
• low-power, high-reliability
• handles memory sizes ranging from 128MB to 2GB
• fast programming speed
• 5V and 3V operation
• one-transistor, two-bit cell design
• on-chip control logic
• erase verify technique

Conclusion

The SST39LF402C-55-4C-EKE-T is a advanced CMOS Flash Memory used for non-volatile storage applications. It is well suited for embedded systems, industrial control systems, medical instruments, and other memory intensive applications. It features an one-transistor, two-bit cell design that enables fast, high-reliability program-verify cycle as well as an erase verify technique. This Flash Memory supports both 5V and 3V operation and has an impressive storage size range of 128MB to 2GB.

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