SST39VF3201-70-4I-EKE-T

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Application Field & Working Principle of SST39VF3201-70-4I-EKE-T Memory

SST39VF3201-70-4I-EKE-T memory is a non-volatile, low power, 32 Mbit Flash Memory. The memory is used in a wide range of applications in electronic devices like smart phones and tablets, where a great reliable, low power triggering is needed. Its innovative design makes it suitable for applications such as code storage and data logging, industrial controllers, and patient monitoring.

The Flash Memory consists of an array of floating gate transistors, each of which can store a bit of information. It is released with a powerful built-in control logic, which is capable of addressing, erasing, writing and programming data in the memory. The control logic is also able to detect inbound or outbound communications from the user in order to retrieve the stored information.

Features of SST39VF3201-70-4I-EKE-T Memory

• High density: 2M bytes (16Mbit)with 8 banks x 16x74 locations
• Low power consumption: 30mA (MAX) during writing, 15mA (MAX) during reading, and 90mA (max) during erasing
• Fast programming time: 10us per byte, 10ms per sector, and 100ms per bank
• Excellent reliability: 20000 erase cycles per sector, 100 times more than traditional EPROM
• Erase saved: Information can be erase only when the assigned sector is deleted, which means that there is no need to manually erase before writing
• Programming Algorithm: Programming Algorithm allows data to be programmed with minimum time and power consumption, as well as multiple data write/erase cycles during a single programming operation.
• Auto Error Correction and Error Detection: Auto ECC helps to detect and correct errors in memory, improving data reliability and performance.

Working Principle of SST39VF3201-70-4I-EKE-T Memory

SST39VF3201-70-4I-EKE-T memory operates using what is known as the Charge Coupled Device (CCD) memory concept. This type of memory has been used since the 1990s, and involves an array of floating gate transistors (FGTs), which are placed into the array. This array is then divided into multiple sectors, each containing 128 bytes of information. Each byte can also have a unique identifier (or "ID"), to allow it to be uniquely accessed and read or written to.

When the memory device is needed to read information, the control logic within the memory can detect the required sector and read the data. This is done by comparing the ID of each byte to the required address. It then sends a signal to the corresponding FGT, passing the data through a series of capacitors, which act as a buffer for the data. This data is then passed to the output device, such as a display or microcontroller.

The SST39VF3201-70-4I-EKE-T memory is then programmed in the same way. The control logic reads the required data and ID of the corresponding FGTs, which can be configured by the user. The data is then loaded onto the capacitors and passed through the array to the target FGT. The data is then written, erased, or programmed by the internal control logic, allowing the user to modify the contents of the Sectors.

Conclusion

In conclusion, SST39VF3201-70-4I-EKE-T memory is a reliable and low power non-volatile memory device which is suitable for a variety of applications. Its excellent reliability, low power consumption, fast programming time, and powerful built-in control logic make it an ideal Flash Memory solution for electronic devices like smart phones and tablets, industrial controllers, and patient monitoring systems.

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