Allicdata Part #: | STB50NE10T4-ND |
Manufacturer Part#: |
STB50NE10T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 50A D2PAK |
More Detail: | N-Channel 100V 50A (Tc) 180W (Tc) Surface Mount D2... |
DataSheet: | STB50NE10T4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 166nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB50NE10T4 is an example of a single Enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in a variety of applications. It is an N-channel part, meaning that it is capable of conducting electrons through the source-drain path when the gate voltage is above a certain threshold voltage. The four pins of the component are the drain (D), gate (G), source (S) and body (B) pins.
The STB50NE10T4 is typically used for low voltage, low current switching applications, where the gate voltage and current are relatively small. It can be used in a variety of applications such as switching power supplies, audio amplifiers, motor control, and digital logic circuits. The component is also used in computer motherboards and communications panels.
The STB50NE10T4 is a low cost and reliable device, with low on-state resistance and high efficiency. It has a maximum drain current of 36A and a maximum drain-source voltage of 100V. It also has a maximum gate-source voltage of 20V and a drain-source capacitance of 80nF. The maximum power dissipation of the device is 80W.
As its name implies, the STB50NE10T4 is an Enhancement-mode MOSFET. This type of transistor is normally off, meaning that no current flows through it unless the gate voltage is above a certain threshold. This means that the transistor can be used in applications where a precise voltage or current is needed to turn it on or off. For example, it can be used in switching circuits where a precise voltage is used to turn the transistor on or off.
The working principle of the STB50NE10T4 is relatively simple. When a positive voltage is applied to the gate pin, the transistor is turned on and conducts current from the source to the drain. The amount of current conducted depends on the gate voltage, gate capacitance and other factors. When the gate voltage falls below the threshold voltage, the transistor is turned off and no current flows through it.
The STB50NE10T4 is a versatile and reliable MOSFET that is widely used in a variety of applications. It is an excellent choice for low voltage, low current switching applications, where it can provide precise control of currents and voltages. It is also relatively low cost and has a high efficiency, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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