Allicdata Part #: | 497-10953-2-ND |
Manufacturer Part#: |
STB5N62K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 620V 4.2A D2PAK |
More Detail: | N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount D2... |
DataSheet: | STB5N62K3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB5N62K3 is a N-channel power field-effect transistor (FET) with significant standby consumption, and is part of a new family of transistors that enable significant savings in power consumption for low power digital systems. This FET provides a low on-resistance and low capacitance for the most efficient operation, making it the ideal choice for switching applications in power-sensitive circuits.
The STB5N62K3 comes with a variety of features and performance benefits. It has a maximum drain current of 5 A, and a maximum voltage rating of 30 V. Additionally, it has an extremely low on-state resistance due to its hybrid of silicon and diamond materials, which gives it an ultra-low gate capacitance and gate charge and a large linear region.
The STB5N62K3 is designed to provide greater energy efficiency and reliability in low power application fields. It is most commonly used in applications that require switching, such as DC to DC conversion, signal conditioning, and voltage translation. It is also used in audio amplifiers, LED drivers, automotive systems, power conversion, transducers, home automation devices, and medical electronics.
The working principle of the STB5N62K3 is based on the concept of gate capacitance. This FET uses two gates, a gate and a source gate, to control the current flow through the FET. The two gates are connected to one another via an insulating layer. When a voltage is applied to the gate, it creates a charge in the gate capacitance, which affects the resistance of the channel. This, in turn, affects the current flow through the FET.
The STB5N62K3 is also designed with a low on-resistance, which allows it to operate at very low voltage levels. This feature makes it ideal for use in audio amplifiers or other circuits that require low power operation. Additionally, its low gate charge and gate capacitance allow it to operate in the linear regime, which gives it the ability to handle even large signals with low distortion.
The STB5N62K3 is an ideal choice for low power applications that require efficient switching and low power consumption. It is an effective tool for reducing power consumption and improving efficiency in digital systems. With its low on-resistance, low gate charge, and low gate capacitance, the STB5N62K3 is the perfect choice for power-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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