Allicdata Part #: | 497-11091-2-ND |
Manufacturer Part#: |
STB5N52K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 525V 4.4A D2PAK |
More Detail: | N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount D2... |
DataSheet: | STB5N52K3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 525V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB5N52K3 is a new type of transistor that combines the properties of a FET (field effect transistor) and a MOSFET (metal-oxide-semiconductor field effect transistor) into one unified device. This type of transistor uses a single crystal of silicon combined with a few layers of well-refined metal oxide to form a complete, working switch. The STB5N52K3 functions by using the varying threshold voltage that is produced when the gate voltage is changed. This threshold voltage is recognized by the current FET and the corresponding output is observed.
The STB5N52K3 is well-suited for a number of applications due to its combination of transistor types. This device performs well in amplifier circuits, which require highly accurate voltage regulation and a fast switching speed. The STB5N52K3 can also combat noise in power supply circuits and provide precise control of lighting and heating elements. It is also a very useful in robotics and robotics applications as it has the ability to instantaneously respond to changing light and motion conditions. All these applications require the consistent switching action provided by the STB5N52K3.
The STB5N52K3 achieves its precise switching performance through the use of its unique bi-directional field effect technology. This technology modulates the threshold voltage so that it is always the same, regardless of the operating temperature or voltage of the circuit. The STB5N52K3 can be adjusted to have any level of threshold voltage, and then the transistors automatically adhere to the desired threshold value.
The STB5N52K3 is also very good at dissipating heat due to its efficient cooling properties. This is because the transistor produces very little voltage and current losses when the device is in its off state, allowing it to remain cool even after long periods of use. This level of heat dissipation is especially important in miniature applications, where size is a major factor. The STB5N52K3 also has a much lower power consumption profile than other types of transistors, meaning that it saves energy.
The STB5N52K3 is an incredibly useful transistor and is suitable for a variety of different applications. With its combination of FET and MOSFET features, the STB5N52K3 provides precise switching, efficient cooling, and low power consumption. This makes it an ideal transistor for use in a wide range of devices and purposes.
The specific data is subject to PDF, and the above content is for reference
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