Allicdata Part #: | STB5NK50Z-1-ND |
Manufacturer Part#: |
STB5NK50Z-1 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 4.4A I2PAK |
More Detail: | N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole I-P... |
DataSheet: | STB5NK50Z-1 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.41586 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The STB5NK50Z-1 is a N-channel MOSFET that is used in a wide range of applications and is suitable for high-side power switches. It is one of the most popular N-channel MOSFETs due to its excellent switching performance and low on-resistance. It is also available in a low-on-resistance version.
N-channel MOSFETs are used in a variety of power application fields. The device has a variety of features, including high frequency switching and low gate discharge, that make it suitable for a broad range of applications. It is used in power switches, motor controls, LED lighting, power conversion, and AC and DC converters, among others.
A MOSFET is a three-terminal device that is composed of a substrate, gate, and drain. The substrate, or body, conducts current but does not have gate protection. The gate controls the channel current depending on the gate voltage. The gate voltage can be set by an external source, such as a transistor, resistor, capacitor, or other component. The drain is the output terminal, and current flows when the gate voltage is above a certain threshold.
The STB5NK50Z-1 MOSFET offers a number of advantages compared to other power switches. Its low on-resistance reduces power loss, providing greater efficiency. The device can also switch at high frequencies, allowing for greater flexibility of design. It is also capable of high gate drive and low gate charge, meaning that it can turn on and off at high speeds. The device also offers a high breakdown voltage, meaning that it can handle large currents without the risk of damaging the device.
The working principle of the device is simple. The gate voltage controls the channel current, and when the voltage exceeds the threshold voltage, the channel opens and current can flow between the source and drain. The threshold voltage can be adjusted using an external component, such as a resistor, and when the gate voltage drops below the threshold voltage, the device shuts off and current ceases to flow.
The STB5NK50Z-1 is an excellent choice for a variety of power applications due to its low on-resistance, high frequency switching, high gate drive and low gate charge, and high breakdown voltage. It is well suited for high-side power switches, LED lighting, power conversion, and motor control. With its various characteristics, the STB5NK50Z-1 can be used in a range of applications to provide efficient and reliable power switching.
The specific data is subject to PDF, and the above content is for reference
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