Allicdata Part #: | 497-16923-2-ND |
Manufacturer Part#: |
STB5N80K5 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 800 V, 1.50 OHM TYP., |
More Detail: | N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D2PA... |
DataSheet: | STB5N80K5 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.57779 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 177pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 1.75 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB5N80K5 is a fifth-generation, N-channel MOSFET technology that provides high performance, power efficiency and reliability for many applications. It is an ideal choice for a wide range of applications, from low-voltage applications such as small signal, power management, to high-current applications such as lighting, power supplies, and automotive. Its modern designtechnology offers a variety of features: N-channel MOSFET operation, single-channel construction, high frequency performance, low-power consumption, and high efficiency.
Application Field
- Switching applications such as switching power supplies, DC-DC converters, audio amplifiers, and motor controls.
- High-current applications such as lighting, power supplies, and automotive controls.
- General-purpose uses, including AC/DC converters, power management systems, and other low-power applications.
- High voltage applications such as DC-DC converters and relay drivers.
Working Principle
The STB5N80K5 is an N-channel MOSFET designed to handle high-current applications. The device contains an N-type channel through which electricity can flow. The main difference between the STB5N80K5 and other MOSFETs is that it uses a single channel. This means that the MOSFET only uses one channel surface instead of two, making it easier to fabricate, more compact, and more efficient.
When a voltage is applied to the Gate, the positively-charged electrons in the N-channel are attracted to the positively-charged Gate. This moves the electrons in the N-channel to one end, creating a conductive path for electricity to flow between the Source and Drain outlets. At the same time, the Gate voltage turns off the electrical flow, preventing further current from flowing through the channel.
The STB5N80K5 has a low RDSon (drain-to-source on-state resistance) of 1.2 Ω. This means it has a very low voltage drop across the MOSFET, allowing it to handle high current without losing much power along the way. The device can handle up to 8A and operates up to 100V. It also has a wide range of operating temperatures, from -55°C to 150°C, making it suitable for applications that require high reliability.
The STB5N80K5 is a fifth-generation N-channel MOSFET designed to handle high current applications with low power consumption. It is ideal for switching, high-current and low-power applications, and can operate at temperatures as low as -55°C. Its single-channel construction makes it easier to fabricate and more efficient, and its low RDSon makes it capable of handling high power without losing much power along the way.
The specific data is subject to PDF, and the above content is for reference
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