STF80N10F7 Allicdata Electronics
Allicdata Part #:

497-14832-5-ND

Manufacturer Part#:

STF80N10F7

Price: $ 1.97
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 40A TO-220FP
More Detail: N-Channel 100V 40A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STF80N10F7 datasheetSTF80N10F7 Datasheet/PDF
Quantity: 84
1 +: $ 1.78920
50 +: $ 1.44535
100 +: $ 1.30082
500 +: $ 1.01177
1000 +: $ 0.83832
Stock 84Can Ship Immediately
$ 1.97
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STF80N10F7 is a commonly used type of field-effect transistor (FET). It is a type of insulated gate field-effect transistor (IGFET). FETs are a type of electronic switch that allows current to flow through an electric circuit when it is powered on and off. STF80N10F7 is a N-channel device, meaning that it is capable of conducting current through its source and drain terminals when there is a voltage difference between them. It is a commonly used type of FET for electronic switching applications.

The STF80N10F7 is mainly used in a variety of power applications. It is commonly used as a switch in DC-DC converters, as they are capable of carrying significant current due to their low on-resistance and high power dissipation. STF80N10F7 devices are often used to achieve good level of efficiency due to their low gate threshold voltage and low drain-source on-resistance. It is also used in car audio amplifiers, to switch power supply lines, and as a motor driver. The STF80N10F7 is also popular in other power applications such as power supplies and switch mode power conversion.

The STF80N10F7 utilizes the principle of a junction field effect transistor (JFET). JFETs are a type of unipolar transistor, meaning it is composed of only one type of semiconductor material. It is formed by joining two semiconductor layers together at a junction. The current flow through the device is controlled by the applied potential between the gate and the substrate. The gate of the JFET acts like an insulating barrier, allowing the interelectronic field to control the current flow through the device.

The functioning of a STF80N10F7 device depends on the gate-source and drain-source voltages applied to it. When the gate voltage is increased above its threshold voltage, the source-drain current starts to increase exponentially. When the gate voltage is reduced, the source-drain current starts to decrease exponentially. The rate of rising current and falling current is determined by the resistance in the channel, which is dependent on the resistance in the source and drain terminals.

The STF80N10F7 is a popular device due to its low on-resistance and high power dissipation. It is often used in power applications due to its capability to efficiently switch power supply lines. The device is known for its improved gate threshold voltage and low drain-source on-resistance, which makes it suitable for a variety of applications. It is mainly used for electronic switching applications, but is also capable of driving motors, switching power supplies, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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