
Allicdata Part #: | 497-7475-5-ND |
Manufacturer Part#: |
STF8NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 7A TO-220FP |
More Detail: | N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STF8NM60N is a power MOSFET device specifically designed for use in SMPS (Switched Mode Power Supplies) applications. It is a N-channel, enhancement mode device with an internally cascaded DMOS structure consisting of two N-channel FETs. This device is fully optimized to reduce switching losses in the power supply applications.
The STF8NM60N is a N-channel MOSFET, which means it has an N-channel gate terminal and source, and a P-channel drain. The N-channel gate terminal is connected to the drain, and provides a path for current to flow from source to drain when the gate voltage is high. When the gate voltage is low, the current is blocked and the device is said to be in an off state.
The STF8NM60N utilizes an internal DMOS structure, which is a type of MOSFET with two transistors in the device. The first transistor, which is an enhancement-type transistor, allows current to flow when the gate voltage is high and blocks current when the gate voltage is low. The second transistor is a depletion-type transistor and blocks current when the gate voltage is high and allows current to flow when the gate voltage is low. The combination of these two types of transistors allows the device to operate in both enhancement and depletion mode.
The STF8NM60N is commonly used in SMPS applications due to its high efficiency and low switching losses. The device has a fast switching time and high power dissipation, making it suitable for high-frequency applications. It also has a wide range of operating voltages, from 12V to 200V, allowing for flexibility in power supply design. In addition, the device has a low gate drive voltage, which allows it to be used in low voltage circuits.
The STF8NM60N is used in various applications including the switching of high current and the control of power in automotive, industrial, and consumer applications. The device is also suitable for use in switching power supplies, DC-DC converters, switched-mode power supplies, and as output devices in motor drives. In addition, it is commonly used as a switch in smart meters, telecommunications equipment, and as a gate driver in AC/DC and DC/DC converters.
In summary, the STF8NM60N MOSFET is designed specifically for use in SMPS (Switched Mode Power Supplies) applications. It is an N-channel, enhancement-mode device with an internally cascaded DMOS structure consisting of two transistors. It is commonly used to switch high currents and is suitable for use in high frequency, high-power applications such as telecoms and motor drive. The device has a wide range of operating voltages and is also commonly used as an output device or as a gate driver in AC/DC and DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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