STF8NK100Z Allicdata Electronics
Allicdata Part #:

497-5007-5-ND

Manufacturer Part#:

STF8NK100Z

Price: $ 3.28
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1000V 6.5A TO220FP
More Detail: N-Channel 1000V 6.5A (Tc) 40W (Tc) Through Hole TO...
DataSheet: STF8NK100Z datasheetSTF8NK100Z Datasheet/PDF
Quantity: 1000
1 +: $ 3.28000
10 +: $ 3.18160
100 +: $ 3.11600
1000 +: $ 3.05040
10000 +: $ 2.95200
Stock 1000Can Ship Immediately
$ 3.28
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF8NK100Z is a n-channel, enhancement mode, field-effect power transistor manufactured by STMicroelectronics. It is designed to be used in medium-current, low-voltage applications. The device is capable of operating at high frequencies, making it well-suited for use in power-conversion and switch-mode power supply circuits. It is easy to use, efficient and reliable, featuring a very low on-resistance.

The STF8NK100Z is a single-gate power Mosfet, capable of operating from as low as 2V and delivering a maximum drain current of 8A. It is an ESD protected, highly reliable device, with a maximum operating supply voltage of 30V and a maximum continuous drain current at 25°C of 8A. It has an RDS (on) of just 38mΩ, a VGS(th) threshold voltage of -4.0V and an ultra-low gate charge. The max RDS (on) variation of the STF8NK100Z ensures good switching performance, enabling higher efficiency and power savings.

The working principle of the STF8NK100Z is based on its three terminals; the gate, the source, and the drain. An applied voltage at the gate terminal controls the FET\'s current flow. This voltage causes the FET to behave as if it consists of two resistors connected between the source and drain. The resistors between the source and drain are known as the ‘channel’; this is enabled by a localized electric field in the semiconductor material, created by an applied voltage. Applying a voltage to the gate increases the FET’s resistance, being a function of the applied voltage. This is known as the ‘gating effect’.

The primary application of the STF8NK100Z are power-conversion and switch-mode power supplies (SMPS); it is well suited for this due to its high-frequency operation capability, low on-resistance and low gate charge. The STF8NK100Z is also ideal for applications including synchronous rectifiers, AC/DC converters, DC/DC converters and DC motor drives, as well as automotive, industrial and consumer applications.

The STF8NK100Z is an efficient, reliable and easy-to-use field-effect power transistor. It offers high performance, excellent switching speeds and low on-resistance, making it ideal for medium-current and low-voltage applications such as power-conversion and switch-mode power supplies. It is also suitable for use in synchronous rectifiers, AC/DC converter, DC/DC converters, DC motor drives and many other automotive, industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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