STF8NM50N Allicdata Electronics
Allicdata Part #:

497-12590-5-ND

Manufacturer Part#:

STF8NM50N

Price: $ 1.63
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 5A TO-220FP
More Detail: N-Channel 500V 5A (Tc) 20W (Tc) Through Hole TO-22...
DataSheet: STF8NM50N datasheetSTF8NM50N Datasheet/PDF
Quantity: 275
1 +: $ 1.63000
10 +: $ 1.58110
100 +: $ 1.54850
1000 +: $ 1.51590
10000 +: $ 1.46700
Stock 275Can Ship Immediately
$ 1.63
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

STFCNM50N is a type of vertical N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that receives power via single supply. It offers substantially low on-resistance for use as lower cost alternatives to high-end MOSFETs. STFCNM50N MOSFETs are frequently used in audio amplification, power distribution, and power switching circuits.

Application Fields

The STFCNM50N is designed for use in audio amplification, power switching, and power distribution circuits. It is especially effective in power distribution applications, providing substantial reduction in power losses due to the low on-state resistance. It is also used in some applications where power loss is less relevant, such as audio amplification, in which the sound quality is of primary concern.

STFCNM50N MOSFETs are commonly used as power switches in Internet of Things (IoT) applications. The low voltage operation and very low on-state resistance makes them a suitable choice, as they do not interfere with the normal operation of the circuit. Additionally, they are very energy efficient, and do not require a separate control signal for their operation.

STFCNM50N MOSFETs are also frequently used in radio frequency (RF) power amplifiers, due to their low noise characteristics, which reduce distortion and increase signal fidelity. The small size of the STFCNM50N allows it to be used in small devices where space is a premium.

Working Principle

The STFCNM50N MOSFETs work by using a four-layer semiconductor structure to create an electric field between two metal electrodes. In operation, voltage is applied to one of the metal electrodes, creating an electric field. The field attracts electrons from the semiconductor, allowing current to flow. The electric field is then modulated by a gate voltage, changing the amount of current flowing through the MOSFET.

At low voltages, the STFCNM50N behaves like an insulator, such that little or no current is allowed to flow. However, when the applied voltage reaches a certain threshold, current starts to flow, and the MOSFET is said to be “on”. The STFCNM50N can be used as a switch, by connecting the gate to a control signal, allowing the amount of current flowing through the MOSFET to be adjusted as needed.

Conclusion

The STFCNM50N MOSFET is a low voltage N-Channel MOSFET with a very low on-state resistance. It is frequently used in audio amplification, power distribution, power switching, and in IoT applications as a power switch. It is also commonly used in RF power amplifiers, due to its low noise characteristics. The STFCNM50N works by using a four-layer semiconductor structure and an electric field applied between two metal electrodes, and a gate voltage to modulate the current through the MOSFET.

The specific data is subject to PDF, and the above content is for reference

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