
Allicdata Part #: | 497-12590-5-ND |
Manufacturer Part#: |
STF8NM50N |
Price: | $ 1.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 5A TO-220FP |
More Detail: | N-Channel 500V 5A (Tc) 20W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 275 |
1 +: | $ 1.63000 |
10 +: | $ 1.58110 |
100 +: | $ 1.54850 |
1000 +: | $ 1.51590 |
10000 +: | $ 1.46700 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 364pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 790 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STFCNM50N is a type of vertical N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that receives power via single supply. It offers substantially low on-resistance for use as lower cost alternatives to high-end MOSFETs. STFCNM50N MOSFETs are frequently used in audio amplification, power distribution, and power switching circuits.
The STFCNM50N is designed for use in audio amplification, power switching, and power distribution circuits. It is especially effective in power distribution applications, providing substantial reduction in power losses due to the low on-state resistance. It is also used in some applications where power loss is less relevant, such as audio amplification, in which the sound quality is of primary concern.
STFCNM50N MOSFETs are commonly used as power switches in Internet of Things (IoT) applications. The low voltage operation and very low on-state resistance makes them a suitable choice, as they do not interfere with the normal operation of the circuit. Additionally, they are very energy efficient, and do not require a separate control signal for their operation.
STFCNM50N MOSFETs are also frequently used in radio frequency (RF) power amplifiers, due to their low noise characteristics, which reduce distortion and increase signal fidelity. The small size of the STFCNM50N allows it to be used in small devices where space is a premium.
The STFCNM50N MOSFETs work by using a four-layer semiconductor structure to create an electric field between two metal electrodes. In operation, voltage is applied to one of the metal electrodes, creating an electric field. The field attracts electrons from the semiconductor, allowing current to flow. The electric field is then modulated by a gate voltage, changing the amount of current flowing through the MOSFET.
At low voltages, the STFCNM50N behaves like an insulator, such that little or no current is allowed to flow. However, when the applied voltage reaches a certain threshold, current starts to flow, and the MOSFET is said to be “on”. The STFCNM50N can be used as a switch, by connecting the gate to a control signal, allowing the amount of current flowing through the MOSFET to be adjusted as needed.
The STFCNM50N MOSFET is a low voltage N-Channel MOSFET with a very low on-state resistance. It is frequently used in audio amplification, power distribution, power switching, and in IoT applications as a power switch. It is also commonly used in RF power amplifiers, due to its low noise characteristics. The STFCNM50N works by using a four-layer semiconductor structure and an electric field applied between two metal electrodes, and a gate voltage to modulate the current through the MOSFET.
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