STF8N60DM2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	449pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	13.5nC @ 10V
Series:	MDmesh™ DM2
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The STF8N60DM2 is a n-channel, single-gate MOSFET transistor. This semi-conductor device is used for various application fields, primarily in power and battery applications. The STF8N60DM2 is designed to provide high efficiency and performance. It is also used for many other applications. This article will discuss the application field and working principle of the STF8N60DM2.</p><h2>Application Fields</h2><p>The STF8N60DM2 is mainly used in power applications, including power conditioning, rectifying, and invertor applications. It is also used in battery applications, such as battery charging and discharging circuits, and in high-efficiency battery chargers. In switch mode power supplies, the STF8N60DM2 is used as a main switch and in several other power control circuits as a control switch. Additionally, it is used in switching converters, DC-DC converters, and power transistors. </p><h2>Working Principle</h2><p>The STF8N60DM2 is a single-gate MOSFET transistor, which employs a gate voltage to control the flow of current. When a small positive voltage is applied to the gate, the transistor is in an “ON” state. This allows the current to flow smoothly between the drain and the source. When the gate receives a zero voltage, the transistor is in an “OFF” state and the current flow is blocked. This “ON/OFF” characteristic makes the STF8N60DM2 an ideal device for power applications, where high efficiency and performance is paramount. </p><p>The STF8N60DM2 has various other features that contribute to its performance. It has a low gate threshold voltage, which allows for faster switching and improved system efficiency. It also has a high maximum junction temperature, which allows for higher operating temperatures. Additionally, it has a low on-resistance, which increases system performance and reduces power dissipation.</p><p>The STF8N60DM2 is an excellent choice for many power applications. Its application fields and working principle are crucial in understanding its capabilities and how it can benefit a particular system. It is a highly efficient and reliable device that can be used in a variety of applications.</p>

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