STF8NK85Z Allicdata Electronics
Allicdata Part #:

STF8NK85Z-ND

Manufacturer Part#:

STF8NK85Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 850V 6.7A TO-220FP
More Detail: N-Channel 850V 6.7A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: STF8NK85Z datasheetSTF8NK85Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drain to Source Voltage (Vdss): 850V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STF8NK85Z is a transistor in the family of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) - Single. This special type of transistor acts as a voltage-controlled current switch and is commonly referred to as a Unipolar transistor, because the current in the channel between the source and the drain can either be off or on.

The application field of STF8NK85Z is quite vast, since it is designed for a wide range of electronic devices and circuits. Generally speaking, these transistors are used in dc-dc voltage converters, low-noise amplifiers, switching mode power supplies, high-frequency amplifiers, power amplifiers and medium powering analog circuits. Additionally, they provide an excellent solution in high-voltage circuits and are used extensively in automotive and industrial market applications. Thanks to its low on-resistance, fast switching capabilities and high temperature tolerance, the STF8NK85Z is a great substitute for many other types of transistors.

The STF8NK85Z follows the basic principle for all MOSFETs, in that it has a three layer semiconductor structure and four terminals. The three layers have a P-type, N-type and Gate configuration, which allows the current to be controlled by manipulating the voltage in the gate. This is done by using the Gate-Source voltage to control the current in the channel between the source and drain. The Gate-Source voltage can act as an on-off switch for the current, which enables it to be used as an amplifier, voltage regulator, and as a switch.

The maximum operating temperature for this transistor is 150°C and the maximum power dissipation is 8.0 Watts. The STF8NK85Z also has a unique Nonlinear VCE(sat) characteristic with a maximum drain source saturation voltage of 2.3 V at the maximum drain current. The linear region provides the voltage control needed for many circuits and applications. As with all FETs and MOSFETs, the STF8NK85Z is one of the most versatile transistors and can be used in many different types of scenarios.

Overall, the STF8NK85Z is a FET/MOSFET device useful for a wide range of applications, from dc-dc voltage converters and low-noise amplifiers to high-frequency amplifiers and power amplifiers. Its low on-resistance, fast switching capabilities and high temperature tolerance make it the perfect choice for many applications. The Gate-Source voltage can act as an on-off switch for the current and the linear region provides the voltage control required for many circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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