
Allicdata Part #: | STF8NK85Z-ND |
Manufacturer Part#: |
STF8NK85Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 850V 6.7A TO-220FP |
More Detail: | N-Channel 850V 6.7A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
Drain to Source Voltage (Vdss): | 850V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF8NK85Z is a transistor in the family of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) - Single. This special type of transistor acts as a voltage-controlled current switch and is commonly referred to as a Unipolar transistor, because the current in the channel between the source and the drain can either be off or on.
The application field of STF8NK85Z is quite vast, since it is designed for a wide range of electronic devices and circuits. Generally speaking, these transistors are used in dc-dc voltage converters, low-noise amplifiers, switching mode power supplies, high-frequency amplifiers, power amplifiers and medium powering analog circuits. Additionally, they provide an excellent solution in high-voltage circuits and are used extensively in automotive and industrial market applications. Thanks to its low on-resistance, fast switching capabilities and high temperature tolerance, the STF8NK85Z is a great substitute for many other types of transistors.
The STF8NK85Z follows the basic principle for all MOSFETs, in that it has a three layer semiconductor structure and four terminals. The three layers have a P-type, N-type and Gate configuration, which allows the current to be controlled by manipulating the voltage in the gate. This is done by using the Gate-Source voltage to control the current in the channel between the source and drain. The Gate-Source voltage can act as an on-off switch for the current, which enables it to be used as an amplifier, voltage regulator, and as a switch.
The maximum operating temperature for this transistor is 150°C and the maximum power dissipation is 8.0 Watts. The STF8NK85Z also has a unique Nonlinear VCE(sat) characteristic with a maximum drain source saturation voltage of 2.3 V at the maximum drain current. The linear region provides the voltage control needed for many circuits and applications. As with all FETs and MOSFETs, the STF8NK85Z is one of the most versatile transistors and can be used in many different types of scenarios.
Overall, the STF8NK85Z is a FET/MOSFET device useful for a wide range of applications, from dc-dc voltage converters and low-noise amplifiers to high-frequency amplifiers and power amplifiers. Its low on-resistance, fast switching capabilities and high temperature tolerance make it the perfect choice for many applications. The Gate-Source voltage can act as an on-off switch for the current and the linear region provides the voltage control required for many circuits and applications.
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