
Allicdata Part #: | 497-13582-5-ND |
Manufacturer Part#: |
STGP20H60DF |
Price: | $ 2.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 40A 167W TO220 |
More Detail: | IGBT Trench Field Stop 600V 40A 167W Through Hole ... |
DataSheet: | ![]() |
Quantity: | 299 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.08000 |
10 +: | $ 2.01760 |
100 +: | $ 1.97600 |
1000 +: | $ 1.93440 |
10000 +: | $ 1.87200 |
Power - Max: | 167W |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 90ns |
Test Condition: | 400V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 42.5ns/177ns |
Gate Charge: | 115nC |
Input Type: | Standard |
Switching Energy: | 209µJ (on), 261µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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STGP20H60DF is an insulated gate bipolar transistor (IGBT) module which belongs to the Single family. The device is a 600V, 20A low-loss FRD technology module, rated for a maximum Avalanche energy up to 80mJ. It is typically used in power inverters, uninterruptible power supplies, motor control, welding and high frequency power supplies. It is packaged in a TO-247 module with a maximum thermal resistance of 1.5°C/W.
The STGP20H60DF IGBT works by applying voltage to the gate. When a voltage is applied to the gate, it activates the IGBT and current flows between the collector and emitter. The voltage applied to the gate is known as the gate drive voltage, typically 5V or 15V. The higher the gate drive voltage, the lower the switching losses of the IGBT. As the gate voltage is decreased, the IGBT will turn off. This gate voltage can be supplied by a gate driver IC, such as the STBC214EG.
The STGP20H60DF works by combining the unique features of both MOSFET (metal-oxide-semiconductor field-effect transistor) and BJT (Bipolar junction transistor) technologies. The device has both N-channel MOSFET and PNP BJT transistors on the same substrate, allowing it to switch between two voltage polarities. This makes the STGP20H60DF an ideal choice for AC/DC and DC/AC conversion processes as it can operate at higher switching frequencies.
The STGP20H60DF also has a very low gate charge, which helps reduce switching losses. In addition, its low conduction losses, fast switching speed and rugged construction make it an attractive device for many applications.
The STGP20H60DF is primarily used for power inverters, uninterruptible power supplies and motor control. It is also commonly used for welding and high frequency power supplies. It is a high power device, so it is often used in applications where large amounts of power need to be rapidly switched. Its low switching losses and fast switching speed are attractive features for these types of applications.
The STGP20H60DF has a maximum power rating of 20A at 600V, and a maximum avalanche energy rating of 80mJ. Its low gate charge helps reduce switching losses, and its rugged construction ensures reliable operation in harsh environments. Its fast switching speed makes it suitable for high frequency power supplies and motor control.
Overall, the STGP20H60DF IGBT is a reliable and efficient device, which offers low loss, high frequency operation and rugged construction. It is ideally suited for applications such as power inverters, uninterruptible power supplies, motor control, welding and high frequency power supplies.
The specific data is subject to PDF, and the above content is for reference
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