| Allicdata Part #: | 497-11336-5-ND |
| Manufacturer Part#: |
STP75N3LLH6 |
| Price: | $ 1.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 30V 75A TO-220AB |
| More Detail: | N-Channel 30V 75A (Tc) 60W (Tc) Through Hole TO-22... |
| DataSheet: | STP75N3LLH6 Datasheet/PDF |
| Quantity: | 1748 |
| 1 +: | $ 1.25000 |
| 10 +: | $ 1.21250 |
| 100 +: | $ 1.18750 |
| 1000 +: | $ 1.16250 |
| 10000 +: | $ 1.12500 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2030pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23.8nC @ 4.5V |
| Series: | DeepGATE™, STripFET™ VI |
| Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 37.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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STP75N3LLH6 is a type of single N-channel enhancement-mode field-effect transistor (FET). FETs are widely used in modern electronics, since they require fewer components and consume much less power than other types of transistors. In this article, we’ll look at the application field and working principle of the STP75N3LLH6 single N-channel FET.
The most common application of the STP75N3LLH6 is in power supplies, as it is able to control high current and voltage with very low power loss. It is also frequently used for switching, sensing, and amplification functions in both digital and analog circuits.
The STP75N3LLH6 is an enhancement-mode FET, meaning that it requires a gate voltage to turn on and achieve high conductivity. This type of FET is well-suited for switching applications, such as switching loads or switching a high-power amplifier, because it can handle large current and voltage with relatively low power loss.
The STP75N3LLH6 is a single N-channel FET, which means that it has a single N-type (negative) conducting channel in the semiconductor material between the source and the drain. N-channel FETs are particularly useful in applications where high performance is required, such as switching power amplifiers or controlling large loads.
The STP75N3LLH6 is designed to operate at a maximum temperature of 125°C and a maximum drain-to-source voltage of 25V. It has a maximum drain current of 75A and a maximum power dissipation of 415W. It is also capable of withstanding extremely high peak transient currents of up to 250A.
The working principle of the STP75N3LLH6 is relatively simple. When a voltage is applied to the gate of the FET, it creates an electric field which causes the N-type material to "open up", allowing current to flow freely between the source and the drain. By adjusting the gate voltage, the level of conduction in the channel can be adjusted, allowing the user to control the current flow through the FET. Additionally, since the gate voltage can be applied or removed quickly, the FET is capable of switching quickly, making it well-suited for use in switching circuits.
In conclusion, the STP75N3LLH6 is a powerful single N-channel FET, capable of controlling large currents and voltages with low power loss. It is well-suited for high-performance switching and amplification applications, and its simple gate-voltage based operation allows for swift and precise control of its parameters.
The specific data is subject to PDF, and the above content is for reference
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STP75N3LLH6 Datasheet/PDF