STP75N3LLH6 Allicdata Electronics
Allicdata Part #:

497-11336-5-ND

Manufacturer Part#:

STP75N3LLH6

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 75A TO-220AB
More Detail: N-Channel 30V 75A (Tc) 60W (Tc) Through Hole TO-22...
DataSheet: STP75N3LLH6 datasheetSTP75N3LLH6 Datasheet/PDF
Quantity: 1748
1 +: $ 1.25000
10 +: $ 1.21250
100 +: $ 1.18750
1000 +: $ 1.16250
10000 +: $ 1.12500
Stock 1748Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 4.5V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 37.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STP75N3LLH6 is a type of single N-channel enhancement-mode field-effect transistor (FET). FETs are widely used in modern electronics, since they require fewer components and consume much less power than other types of transistors. In this article, we’ll look at the application field and working principle of the STP75N3LLH6 single N-channel FET.

The most common application of the STP75N3LLH6 is in power supplies, as it is able to control high current and voltage with very low power loss. It is also frequently used for switching, sensing, and amplification functions in both digital and analog circuits.

The STP75N3LLH6 is an enhancement-mode FET, meaning that it requires a gate voltage to turn on and achieve high conductivity. This type of FET is well-suited for switching applications, such as switching loads or switching a high-power amplifier, because it can handle large current and voltage with relatively low power loss.

The STP75N3LLH6 is a single N-channel FET, which means that it has a single N-type (negative) conducting channel in the semiconductor material between the source and the drain. N-channel FETs are particularly useful in applications where high performance is required, such as switching power amplifiers or controlling large loads.

The STP75N3LLH6 is designed to operate at a maximum temperature of 125°C and a maximum drain-to-source voltage of 25V. It has a maximum drain current of 75A and a maximum power dissipation of 415W. It is also capable of withstanding extremely high peak transient currents of up to 250A.

The working principle of the STP75N3LLH6 is relatively simple. When a voltage is applied to the gate of the FET, it creates an electric field which causes the N-type material to "open up", allowing current to flow freely between the source and the drain. By adjusting the gate voltage, the level of conduction in the channel can be adjusted, allowing the user to control the current flow through the FET. Additionally, since the gate voltage can be applied or removed quickly, the FET is capable of switching quickly, making it well-suited for use in switching circuits.

In conclusion, the STP75N3LLH6 is a powerful single N-channel FET, capable of controlling large currents and voltages with low power loss. It is well-suited for high-performance switching and amplification applications, and its simple gate-voltage based operation allows for swift and precise control of its parameters.

The specific data is subject to PDF, and the above content is for reference

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