
Allicdata Part #: | 497-16497-5-ND |
Manufacturer Part#: |
STP7LN80K5 |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 5A TO-220 |
More Detail: | N-Channel 800V 5A (Tc) 85W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1606 |
1 +: | $ 1.21590 |
50 +: | $ 0.97814 |
100 +: | $ 0.88030 |
500 +: | $ 0.68466 |
1000 +: | $ 0.56728 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 1.15 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP7LN80K5 is a power field effect transistor (FET). It is a n-channel enhancement MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a 8-pin chip. It has ideal switching characteristics, low on-resistance, low gate charge and low gate-source voltage.
The STP7LN80K5 is widely used in applications requiring high-speed power switching, such as Switch Mode Power Supplies (SMPS), switch-mode amplifiers, resonant converters and motor control. Even with its low cost, it is an ideal choice for high performance power switching applications.
Application Field
The STP7LN80K5 can be used in switch mode power conversion, system networking, motor control, audio amplifiers, and power inverters. It has built-in ESD protection and is suitable for applications where the need for fast switch off is required. It also provides optimized performance in a variety of power circuits, eliminating the need for external components to maintain frequency stability.
The STP7LN80K5 also has a wide range of applications such as clock circuits, low dropout regulators, noise filters, and short circuit protection.
Working Principle
The working principle of the STP7LN80K5 follows the basic operation of an enhancement MOSFET. It is composed of a source, drain and gate terminals, with a metal oxide layer separating the source and the drain. When the voltage applied to the gate terminal reaches a certain value, the transistor is switched on and current can flow between the source and the drain. As the voltage decreases, the current between the source and the drain decreases, and as the voltage decreases further, the transistor switches off completely.
The STP7LN80K5 also is a punch through technology transistor, which means that it has the ability to keep a high current flow even when the voltage on the gate drops. This provides a better control of the switching time, and also ensures low on-state resistance and low power consumption.
The STP7LN80K5 also has lower gate charge than other types of FETs, which makes it an ideal choice for applications requiring fast switching, such as switching power supplies and audio amplifiers.
Overall, the STP7LN80K5 is an ideal choice for high performance power switching and high current applications. With its low cost and wide range of applications, the STP7LN80K5 is a great choice for any project requiring power switching.
The specific data is subject to PDF, and the above content is for reference
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STP75NF20 | STMicroelect... | -- | 785 | MOSFET N-CH 200V 75A TO-2... |
STP7N80K5 | STMicroelect... | 2.28 $ | 1000 | MOSFET N-CH 800V 6A TO220... |
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STP76NF75 | STMicroelect... | -- | 294 | MOSFET N-CH 75V 80A TO-22... |
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