STP7NB60

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The STP7NB60 is a very popular N-channel enhancement mode lateral power MOSFET, used for a variety of purposes in power electronics. It is suitable for blocking voltages up to 600V, and capable of discrete on-resistance values as low as 2.9mΩ. It shares many similarities with other members of the STP7Nxx family, but its flexibility and low cost make it a preferred choice for power applications.

The STP7NB60 is most commonly used as a switch in applications such as motor control, battery management systems, power management, and industrial automation. It is also suitable for applications in solar power systems, fuel cells, and LED lighting systems.

The device can operate with both analog and digital interface, allowing the designer to interface it with a wide range of control solutions. It has a wide input voltage range from 5 to 18V that makes it especially suitable for battery powered applications.

The STP7NB60 offers several features that make it a perfect choice for a large variety of applications. It features a continuous current capability of up to 37A at 100°C, and a power dissipation of up to 165W. It also features a high ESD tolerance of up to 8kV, and a high avalanche energy of 80 mJ. It also has an operating temperature range from -55°C to 150°C, providing designers with significant flexibility in applications where thermal considerations are an issue.

The primary working principle of the STP7NB60 is through the action of a voltage applied to the Gate terminal. This voltage attracts mobile electrons from the Source terminal to the Drain terminal, allowing a current to flow in the channel between them. As the Gate voltage is increased, the current through the channel increases, and when it reaches a predetermined level, the device shuts off completely. This process is known as saturation, and it provides the device with its unique characteristics of being able to switch between open and closed states with a simple voltage pulse at the Gate terminal.

The STP7NB60 also provides superior noise immunity, thanks to its advanced EMI filtering capabilities. It can also function without an external driver, allowing designers to reduce cost and simplify design. Its ultra-low on-state resistance permits the switching of large currents with minimal losses, and its low gate charge enables fast switching speeds.

In summary, the STP7NB60 is a feature-rich N-channel enhancement mode lateral power MOSFET suitable for a wide range of power electronic applications. It is a great choice when it comes to effectively controlling current, providing superior noise immunity and fast switching due to its unique design, and its wide input voltage range, high ESD tolerance and high avalanche energy make it the perfect choice for a variety of power applications.

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