STP7N65M2

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The STP7N65M2 is an N-channel, insulated gate field-effect transistor (IGFET), commonly referred to as Power MOSFET. It is manufactured by STMicroelectronics and is part of their STripFET II family of devices. It is available in a TO-220FP package.

This MOSFET is designed for applications such as power supply converters, motor control, home appliances, and many other consumer electronics, automotive and industrial applications. It is a high-power, high-speed device capable of switching high currents with low on-resistance. The device is capable of operating with a maximum drain–source voltage (Vds) of up to 600V, a maximum drain current (Ids) of up to 12A and a maximum continuous source drain diode current (Idd) of up to 2.4A.

The STP7N65M2 works by controlling the flow of current through an insulated gate. MOSFETs have three main terminals: the gate, drain and source. The gate is insulated from the semiconductor material and acts as an input terminal. The drain and source are connected to the semiconductor material, and voltage applied to the gate controls the current flow between the drain and the source. When a voltage is applied to the gate, current flows through the device. This forms a conducting path between the drain and the source, allowing current to flow until the gate voltage is removed.

The gate voltage (Vgs) determines the amount of current allowed to pass through the device. When Vgs is too low, the device remains off, preventing current from passing through. When Vgs is higher than a specific threshold voltage (Vth), the device enters its linear region of operation and the amount of current which can flow through increases proportionally as Vgs increases. When Vgs reaches its maximum (Vgs(max)), the device enters its saturation region and the current is limited by the drain-to-source resistance (Rds).

The average gate charge (Qgs) of the STP7N65M2 is typically 1.1nC and it can handle up to 90W of power dissipation. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It also has a maximum junction temperature of 175°C and a thermal resistance of 23°C/W.

The STP7N65M2 is a powerful, high-speed MOSFET suitable for a wide range of applications. It is capable of switching high currents with low on-resistance and is capable of operation under harsh environments. Its average gate charge and power dissipation capabilities make it well suited for high power applications such as motor control, power supply converters and home appliances.

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