STP75NF75FP

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The STP75NF75FP is a n-channel working principle metal-oxide-semiconductor field-effect transistor (MOSFET), designed specifically for applications in power-control and power-switching. Manufactured in a standard 75V FLMOS process, it consists of a double-sided platinum drain-oxide (DPO)-silicon substrate with an integrated gate circuit. The integrated gate circuit enables a very efficient gate control which makes it possible to reduce on-state conduction losses and DC gate-source voltage requirements for switching applications. Additionally, its high thermal cycling performance makes it suitable for use in a wide variety of applications that involve frequent switching.

When operating in the linear region, the STP75NF75FP is capable of delivering high peak power output. Its drain-source breakdown voltage of 75V and its low RDS(ON) make it suitable for a wide variety of applications that require high switching frequencies and power efficiency. It has a gate threshold voltage of 0.6V, drain-source saturation voltage of 0.45V, gate charge of 3.2nC, and drain-source on-resistance of 32 Ω. This makes it suitable for use in a wide variety of applications, as power-switching applications require very efficient gate control for maximum power savings and minimized losses.

When used as a switching device, the STP75NF75FP requires very low gate-source voltage for optimal operation. The integrated gate circuit allows for a very low gate-source voltage requirement for switching, which is just 0.4V. Consequently, the power-switching applications of the STP75NF75FP can obtain high switching speeds at very low applied voltages. Additionally, the drain-source terminal resistance of 32Ω makes it a suitable device for applications that require high switching frequencies. In addition to this, the coupled gate-source circuit provides very low turn-on gate resistance, which leads to increased power dissipation.

The STP75NF75FP is also suitable for applications that require high-frequency switching, and its low gate-source charge enables the use of small timing elements and lower power consumption. In addition to these features, the STP75NF75FP also offers a wide safe operation area, allowing higher peak power output than traditional MOSFETs. Furthermore, the shield cells provide improved ESD performance which enhances the protection of the device from overvoltage and electrostatic discharge.

The STP75NF75FP is a versatile transistor that can be used in a wide variety of applications, from power-control and switching to high-frequency switching. Its integrated gate circuit and high thermal cycling performance enable a wide range of uses, while its low gate-source charge and wide safe operation area allow for high performance and protection. Additionally, its RDS(ON), high drain-source breakdown voltage, and shield cells make it a suitable device for a wide variety of applications.

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