STP75N75F4

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5015pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	76nC @ 10V
Series:	DeepGATE™, STripFET™
Rds On (Max) @ Id, Vgs:	11 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	78A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The STP75NF75F4 is a well-known one of the most popular Maratx Power MOSFETs on the market. It is used in a variety of applications such as switching, amplification, and rectification. This article will outline the typical applications and working principles of the STP75NF75F4, as well as its wide range of uses and benefits.The STP75NF75F4 has a maximum drain-source voltage rating of 75 V, while its nominal drain current and maximum current ratings are 75 A and 180 A respectively. As such, it is suitable for applications that involve high current switching and amplification. Its RDS(on) rating is 0.004 Ω, making it an ideal choice for applications that require low power consumption and low losses. It also offers high source-drain breakdown voltage and excellent thermal characteristics, making it suitable for power amplifiers.The STP75NF75F4 is commonly used for motor control, power supply, and power switching applications. For example, it can be used as a switching or amplifier device for controlling the speed of a motor. It is also used in a variety of power switching applications such as on/off switching, variable speed control, and dimmer control. In addition, it can be used in rectification applications to convert AC input power to DC power, and it can also be used in power supply designs, such as those used in the automotive and industrial sectors. In terms of its working principles, the STP75NF75F4 is a field-effect transistor (FET) integrated circuit (IC). FETs are fully controllable switches that use a small electric field to control a large current. The STP75NF75F4 is a MOSFET device, which is a type of FET. MOSFETs are very efficient transistors that can be used in both analog and digital circuits. In the STP75NF75F4 device, an electric field applied to the gate voltage affects the current flow between the drain and source terminals. In other words, the drain-source current is proportional to the drain-source voltage and is modulated by the gate voltage. The current conduction in a MOSFET is also known as drain-source conductivity, which is controlled by the voltage between the gate and the source terminal. The STP75NF75F4 consists of several parts that allow it to perform its various functions. Its main parts are the drain, source, body, and gate. The drain and source are the two terminals of the device that are connected to the circuit. The body is a substrate within the device, and the gate is the voltage that is applied to the substrate. The gate voltage is the input to the circuit and is responsible for controlling the current flow between the drain and source terminals. The STP75NF75F4 is a durable and reliable device that offers a wide range of benefits for various types of applications. Its high source-drain breakdown voltage rating of 75 V and its excellent thermal characteristics make it suitable for power amplifiers and other circuits that require low power consumption and low losses. Furthermore, its low RDS(on) rating of 0.004 Ω makes it ideal for applications that require high current switching and amplification. All of these features combine to make the STP75NF75F4 a great choice for a variety of applications.

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