STU25N10F7 Allicdata Electronics
Allicdata Part #:

STU25N10F7-ND

Manufacturer Part#:

STU25N10F7

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 100V 25A IPAK
More Detail: N-Channel 100V 25A Through Hole I-PAK
DataSheet: STU25N10F7 datasheetSTU25N10F7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.40572
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: --
Series: STripFET™ F7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STU25N10F7 is an extremely power efficient, premium level N-channel power MOSFET with a drain-source breakdown voltage rating of 25V. This MOSFET is designed specifically for use in high power switching applications, with very low on-state resistance and a very fast transient response. The STU25N10F7 has some of the highest switching speeds available, with a maximum switching frequency of up to 5kHz.

The STU25N10F7 MOSFET is ideal for applications requiring high power density and efficiency such as DC-DC converters, motor drives, and power management of high power loads. It can also be used in switch-mode power supplies (SMPSs), pulse width modulated (PWM) switching, and other high frequency switching applications.

The STU25N10F7 is a single-channel MOSFET, which means it has only one drain connection. It also has a Gate connection, which controls the on/off state of the MOSFET. The Gate connection is the key component of the MOSFET, as it is the part that tells the MOSFET what to do. The Gate is used to control the voltage between the drain and the source. When the voltage at the gate is high, the MOSFET will turn on and allow current to flow. Conversely, when the voltage at the gate is low, the MOSFET will turn off and no current will flow.

The STU25N10F7 MOSFET has a low drain-source on-resistance of 0.004Ω, which means it can handle very high currents with very little power loss. This makes it extremely efficient, as well as being very fast. The STU25N10F7 also has a very low gate charge of only 8.2nC, meaning it can switch between states quickly and efficiently. Additionally, the MOSFET has a very low thermal resistance of 1.4°C/W, making it suitable for use in both low and high temperature environments.

The STU25N10F7 MOSFET is widely used in power electronics applications due to its high power efficiency and its ability to switch very quickly. It is also suitable for use in any application requiring a high power density, high efficiency, and fast switching speeds. This makes the STU25N10F7 an ideal choice for applications such as DC-DC converters, motor drivers, power management of high power loads, switch-mode power supplies (SMPSs), and pulse width modulated (PWM) switching.

The specific data is subject to PDF, and the above content is for reference

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