STU2N95K5

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The STU2N95K5 is a field-effect transistor (FET) in the metal–oxide–semiconductor (MOS) family. It is a single-gate device that can be used for a wide variety of electrical functions, such as switching, amplification, and signal processing. FETs are popular for controlling high-frequency signals, high-voltage signals, and very small signals. This is because they have low gate capacitance, which means they are relatively insensitive to changes in the surrounding environment.

In FETs, like the STU2N95K5, electrons in the channel between the source and drain electrodes act as a “gate” to control the conduction from source to drain. When a suitable voltage is applied to the gate, electrons are drawn out of the channel, allowing a current to pass from source to drain. When the voltage is removed, the electrons return to the channel, blocking current flow.

The STU2N95K5 is a common-source N-channel MOSFET, which means it uses an electric field to control conductivity between the source and drain terminals. The N-channel MOSFET has a larger channel than a P-channel MOSFET, so it is ideal for high-power applications. It also has a higher switching speed than a P-channel MOSFET, making it ideal for high-speed digital applications.

The STU2N95K5 has a maximum drain-to-source voltage of 500 V and a maximum drain current of 2 A. It also has a low drain-to-source on-state resistance of only 150 mΩ, which means it can handle large current spikes with minimal power losses. It is also relatively immune to noise, making it suitable for signal-processing applications.

The STU2N95K5 can be used for a wide variety of applications, such as switching, signal processing, and amplification. It is particularly useful for high-voltage and high-power applications, due to its large channel and low on-state resistance. It is also suitable for high-frequency and high-speed applications, due to its fast switching speeds and low gate capacitance.

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