Allicdata Part #: | 497-15282-5-ND |
Manufacturer Part#: |
STU2N105K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1050V 1.5A IPAK |
More Detail: | N-Channel 1050V 1.5A (Tc) 60W (Tc) Through Hole IP... |
DataSheet: | STU2N105K5 Datasheet/PDF |
Quantity: | 2872 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 1050V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STU2N105K5 is a type of Field-Effect Transistor (or FET), more specifically a Metal Oxide Semiconductor Field Effect Transistor (or MOSFET), and one with a single gate configuration. It belongs to a family of FETs that are notable for their operating principle, enabling them to perform complex analog and digital functions that would otherwise be difficult to achieve. Their ability to control voltages and currents in a very precise manner makes them essential for a wide range of applications.
FETs are widely used in the electronics industry due to their high input impedance and low noise levels, which makes them ideal for switching and amplification of low level signals. They can also be used in digital circuits, providing higher levels of integration than their bipolar counterparts.
The STU2N105K5 has some excellent characteristics that make it particularly suitable for applications in high speed and high frequency analog and digital circuits. It has a very low input and output capacitance, allowing high speed switching with minimal propagation delay. It has a low gate-source threshold voltage, leading to very low power dissipation, while its on-state resistance is relatively low, enabling efficient power control and reliable switching.
The working principle of the STU2N105K5 is quite simple. When a small voltage is applied to its gate terminal, the current flow between the source and drain is modulated via an electrostatic field. This is possible because the FET’s drain-source path contains a channel composed of an N-type semiconductor, which is effectively controlled by the applied gate voltage. When a positive voltage is applied to the gate, the N-type channel is formed and conducts current, thus enabling conduction between the source and the drain.
The STU2N105K5 is capable of working in both the enhancement and depletion modes, allowing a wide range of switching and amplifying functions. In the enhancement mode, a higher voltage is applied to the gate to make the channel more conductive, while in the depletion mode a reverse process occurs, where a lower voltage causes the channel to become less conductive. It can also be used in its linear operating region, where a linear relationship exists between the drain current and the gate voltage.
The STU2N105K5 can be used in numerous applications, such as power management, logic circuits, power amplifiers, motor control and mobile communications. It can also be used in automated test equipment and for audio processing, where its low propagation delay and low power consumption is beneficial. Additionally, its linear region of operation can also be used for linear video applications.
To summarize, the STU2N105K5 is a type of MOSFET, with a single gate configuration, that can be used for a range of applications both in the analog and digital domains. Its ability to modulate the current flow between the source and drain, through the application of a small voltage to its gate terminal, makes it a very useful and practical component.
The specific data is subject to PDF, and the above content is for reference
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