STU2LN60K3 Allicdata Electronics
Allicdata Part #:

497-13393-5-ND

Manufacturer Part#:

STU2LN60K3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 600V 2A IPAK
More Detail: N-Channel 600V 2A (Tc) 45W (Tc) Through Hole I-PAK
DataSheet: STU2LN60K3 datasheetSTU2LN60K3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STU2LN60K3 is a protected high-performance n-channel enhancement mode Field-Effect Transistor (FET). It is designed to replace mechanical relays in applications such as, but not limited to, low-voltage switching and high-current control. It contains two FETs in series and is composed of an enhancement-mode, n-channel FET, or “single” device.

This FET is often chosen for its compact size, high current rating, and low on-state resistance (Rdson). It is also known for its strong dielectric withstanding voltage, high breakdown voltage and fast switching speed. In addition, unlike bipolar junction transistors, FETs offer good thermal stability, meaning it can still function properly at high temperatures.

The main application fields of this single FET are when fast switching, high current and low-voltage operation are desired, such as in motor control or high-speed power switching. The FET’s application field mainly involves low voltage and high current ratings, with an on-state resistance of 45 mΩ offered at 1A. The off-state and "on" states of a FET are controlled by its Gate Short Circuit Protection and Anti-Parallel Diode, both of which are built-in.

The working principle of the STU2LN60K3 is primarily based on the application of electric fields to control current flow. When voltage is applied to the drain-source terminals and the “gate” is also supplied with voltage, gate current begins flowing. This voltage closes the gap between source and drain, and turns on the FET. This allows for current to flow between the drain and source. When the gate voltage is removed, the FET shuts off, no current flows from source to drain, and the gap is opened again.

The on/off behaviour of FETs is usually explained by the following two equations:

  • Vgs = Vds = Vgs – Vth (Threshold Voltage)
  • Vgs = Vds = Vgs – Vdson (On State Resistance)

In addition to its main function, STU2LN60K3 also provides additional features such as short-circuit protection, ESD protection, over-voltage protection, under-voltage protection and over-temperature protection. This ensures that the device is safe from external faults, whether it is an overload or a sudden increase/decrease in supply voltage.

STU2LN60K3 can be used for many different applications, such as for motor control, switching, timing and voltage regulation. With its fast switching speed and low on-state resistance, this FET is considered a reliable and efficient choice for protecting low-voltage circuits—making the STU2LN60K3 an ideal choice for any industrial or consumer electronic project.

The specific data is subject to PDF, and the above content is for reference

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