Allicdata Part #: | 497-15022-5-ND |
Manufacturer Part#: |
STU2N80K5 |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 2A IPAK |
More Detail: | N-Channel 800V 2A (Tc) 45W (Tc) Through Hole IPAK ... |
DataSheet: | STU2N80K5 Datasheet/PDF |
Quantity: | 4 |
1 +: | $ 1.05210 |
75 +: | $ 0.83983 |
150 +: | $ 0.73487 |
525 +: | $ 0.56989 |
1050 +: | $ 0.44992 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 105pF @ 100V |
Vgs (Max): | 30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STU2N80K5 is a power MOSFET belonging to Vishay Siliconix’s Advanced Super Junction MOSFET product family. Specifically, it is a N-channel MOSFET, having a drain current of 80 Amps, a maximum drain-source voltage of 40V, a maximum gate-source voltage of ±20V and a total gate charge of 65nC. This MOSFET is used in multiple applications requiring high efficiency, low power dissipated, fast switching, high power density and improved reliability.
STU2N80K5 is first and foremost used as a high-speed switch, employed for switching both AC and DC currents and powers. This makes it suitable for applications such as DC-DC power converters, AC adapters and high-performance systems needing fast switching speeds. Other possible applications include class-D audio amplifiers, industrial automation hardware, medical products such as medical monitoring, and telecommunications systems and equipment.
The STU2N80K5’s working principle is based on the MOSFETs switching technology. MOSFETs operated as a switch requires two principal components, the gate and the channel, and typically require low voltage and power to function. The gate acts like an electronically controlled switch, while the channel is built up of a few layers of silicon dioxide and silicon.
When a voltage is applied to the gate of a MOSFET, a tiny electric field is created, which results in some of the electrons of the channel being repelled from that [gate]. This phenomenon, termed as electrostatic induction, leads to an almost insulative resistance between the drain and the source, preventing any current from flowing. Depending on the magnitude of the voltage of the gate, the flow of current can be controlled. Thus, the channel on the MOSFETs serve as an electronically adjusted resistance, which can be precise and sustain long-term reliable operation.
The STU2N80K5 can also be used in applications needing current amplification, such as amplifying an audio signal from a microphone. Since the voltage at the gate has a direct impact on the flow of current, the STU2N80K5 can be used to amplify the current at the drain for the same input voltage at the gate. This arrangement can be called a “source follower” configuration. Additionally, the STU2N80K5 is appreciated for its time constant and can be used in circuits requiring current integration.
The specific data is subject to PDF, and the above content is for reference
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