Allicdata Part #: | STU27N3LH5-ND |
Manufacturer Part#: |
STU27N3LH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 27A IPAK |
More Detail: | N-Channel 30V 27A (Tc) 30W (Tc) Through Hole I-PAK |
DataSheet: | STU27N3LH5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 475pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STU27N3LH5 is a silicon-based transistor designed for various applications. It has a V DS @Tj = 25°C rating of 27V and a rated drain current of 68A. It can be used in a wide variety of applications, such as power supplies, motors, and amplifiers. It is an N-channel enhancement type MOSFET (metal–oxide–semiconductor field-effect transistor) that provides superior switching performance. As a result, it is rapidly becoming the preferred choice for switching applications that require high efficiency and performance.
The STU27N3LH5, MOSFET, has a few features that make it stand out from other transistors. First, its low drain–source on–resistance, R DSON , gives it the capability to handle high currents. This allows it to switch current quickly, making it a good choice for high-current applications such as motor control. Second, its fast switching speed allows it to switch quickly, increasing its efficiency and response time. Lastly, its small package size makes it ideal for small electronics designs. This is especially beneficial when used in space-constrained applications.
The working principle behind the STU27N3LH5 MOSFET is simple. It consists of three pins, the gate, the source, and the drain. When a current is applied to the gate, a voltage is created between the source and the drain. This creates a field of electrons that forces the electrons in the drain–source circuit to flow. This, in turn, creates a current in the drain–source circuit.
The STU27N3LH5 MOSFET is versatile and can be used in a variety of applications. It can be used as a power switch, as a motor control, or as an amplifier. Because of its low on-resistance and fast switching speed, it is often the preferred choice for power applications where efficiency is of paramount importance. In addition, its small package size makes it an ideal choice for space-constrained applications.
In conclusion, the STU27N3LH5 is a silicon-based transistor designed for various applications. It is an N-channel enhancement type MOSFET that provides superior switching performance and can be used in a wide variety of applications. It has low on-resistance and a fast switching speed, making it ideal for power applications. Its small package size makes it an ideal choice for space-constrained applications. As a result, it is rapidly becoming the preferred choice for switching applications that require high performance and efficiency.
The specific data is subject to PDF, and the above content is for reference
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