
Allicdata Part #: | STU70N2LH5-ND |
Manufacturer Part#: |
STU70N2LH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 25V 48A IPAK |
More Detail: | N-Channel 25V 48A (Tc) 60W (Tc) Through Hole I-PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STU70N2LH5 Application Field and Working Principle
The STU70N2LH5 is a N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that features a basic three-terminal design. It is a low-voltage, high-current switch commonly used in a variety of applications that range from home and commercial electronics control to industrial power and sensing applications.
Field of Application
The STU70N2LH5 is often used to amplify (switch) signals in printed circuit boards, electronic automobiles, and various industrial processes. In electronic automobiles, STU70N2LH5 MOSFET is used to switch the brake headlights, electric valve system, and to control force motors and signal amplifiers. They are also used in home appliances and consumer electronics such as LCD/LED TV remote controls, motor speed adjustment, and temperature control systems.
Working Principle
The STU70N2LH5 MOSFET works based on the “Field Effect” principle. This type of MOSFET operates on the principle of voltage applied to the gate terminal which affects the current flowing through the device. This is achieved when the voltage applied at the gate terminal creates an electric field which ‘pulls’ the electrons from the N-type area to the S-type area, which in turn controls the drain-source current (ID).
The electric field generated by the gate current controls the on/off state of the device, depending on whether the device is in the on or off state. In the off state, the voltage applied to the device is insufficient to create a strong enough electric field to draw the electrons towards the S-region. Hence, the device will remain off. In the on state, the voltage applied to the device is strong enough to create a strong electric field, which then draws the electrons towards the S-region, thus allowing the drain-source current to flow.
Drawbacks
Though the STU70N2LH5 MOSFET is ideal for low voltage and high current applications, it does not have the capability to switch the high voltages. Another drawback of using this device is that it has a high gate-drain leakage current which causes power dissipation even with the device in an off state.
Conclusion
The STU70N2LH5 MOSFET is an economical and effective device for low voltage and high current applications. It is used in a variety of applications ranging from home and commercial electronics control to industrial power and sensing applications. Despite having some drawbacks, this device is still one of the most commonly used devices in many electronic products.
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